Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Adsorption »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Adsorbed state < Adsorption < Adsorption isotherm  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000002 (2014) Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000098 (2012) Spectroelectrochemical Characterization of Small Hemoproteins Adsorbed within Nanostructured Mesoporous ITO Electrodes
000134 (2012) Design of amphoteric mixed oxides of zinc and Group 3 elements (Al, Ga, In): migration effects on basic features
000141 (2012) Amino-modified MIL-68(In) with enhanced hydrogen and carbon dioxide sorption enthalpy
000253 (2010) [11]Anthrahelicene on InSb(001 ) c(8x2): A Low-Temperature Scanning Probe Microscopy Study
000429 (2009) Internal Architecture and Adsorption Sites of Violet Lander Molecules Assembled on Native and KBr-Passivated InSb(001) Surfaces
000624 (2007) Study of Ir/WO3/ZrO2-SiO2 ring opening catalysts. Part I: Characterization
000C45 (2003-04-14) Self-assembled molecular chains formed by selective adsorption of lead-phthalocyanine on InSb(100)-(4×2)/c(8×2)
000C87 (2003) Surface and self-organisation of III-V thin films for optoelectronics: Influence of surface orientation and strain on growth mechanisms
000F32 (2002) Real examples of surface reconstructions determined by direct methods
001112 (2001-03-15) Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations
001407 (2000) Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001A02 (1998) Growth and characterization of zinc sulfide thin films deposited by the successive ionic layer adsorption and reaction (SILAR) method using complexed zinc ions as the cation precursor
001E81 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
001F19 (1996) Interaction of H2, n-butane and cis-2-butene with Pt and Pt In in NaY : a microcalorimetric study
002143 (1995) Na/InAs(110) interface formation at RT
002368 (1994) Photoemission extended X-ray absorption fine structure (PEXAFS): a new approach to probe surface and interface atomic geometry
002404 (1994) Giant band bending and interface formation of Cs/InAs(110) zt room temperature
002444 (1994) Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum
002491 (1993-05) Interaction, à température ambiante, de l'hydrogène atomique et de l'ammoniac avec la surface clivée propre du phosphure d'indium
002497 (1993-03) Développement de la diffraction des photoélectrons à basse énergie cinétique à l'aide du rayonnement synchrotron. Application à l'étude des surfaces InP(110) et H/InP(110)

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Adsorption" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Adsorption" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Adsorption
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024