Activation < Activation energy < Activation parameter

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 63.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000156 (2011)		The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots
000179 (2011)		Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000272 (2010)		Reliability of high voltage/high power L/S-band Hbt technology
000378 (2009)		Thickness dependent physical properties of close space evaporated In2S3 films
000420 (2009)		Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000431 (2009)		Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
000443 (2009)		III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
000550 (2008)		Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
000622 (2007)		Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films
000641 (2007)		Oxide ion conduction in Ba, Ca and Sr doped apatite-type lanthanum silicates
000660 (2007)		Mean-coordination number dependence of the fragility in Ge-Se-In glass-forming liquids
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000845 (2006)		Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
000846 (2006)		Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
000861 (2006)		Admittance spectroscopy of cadmium free GIGS solar cells heterointerfaces
000914 (2005)		Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000982 (2005)		Electrical properties of doped 3-tetradecylpolypyrrole/metal devices
000992 (2005)		Diffusion of Zn in CuInSe2 bulk crystals
000997 (2005)		Dependence on temperature of homogeneous broadening of InGaAs/InAs/GaAs quantum dot fundamental transitions
000998 (2005)		Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Activation energy" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Activation energy" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Activation energy
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024