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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Acceptor center »
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Acceleration sensor < Acceptor center < Acceptor donor pair  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]
Ident.Authors (with country if any)Title
000233 (2011) Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C60 couple
000414 (2009) Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications
000861 (2006) Admittance spectroscopy of cadmium free GIGS solar cells heterointerfaces
000992 (2005) Diffusion of Zn in CuInSe2 bulk crystals
000F93 (2002) Investigation of the local structure of as-related acceptor centres in InSe by means of fluorescence-detected XAS
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001941 (1998) Relative absorption strengths of neutral and negatively charged excitons in CdTe quantum wells
002785 (1992) Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs
002855 (1992) Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002B52 (1990) Identification of the Fe acceptor llevel in Ga0.47In0.53As
002B53 (1990) Hydrogen neutralization of acceptors in highly doped GaInAs:Zn
002B84 (1990) Concerning lattice defects and defect levels in CuInSe2 and the I-III-VI2 compounds
002B91 (1990) Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: defect transformation (H4-E11)→H′4
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
002D26 (1988) Very high purity InP epilayer grown by metalorganic chemical vapor deposition
002D29 (1988) Time-resolved recombination dynamics of photoionized hydrogenlike impurities
002D31 (1988) Time-resolved far-infrared magnetospectroscopy of hydrogenlike impurities in III-V semiconductors
002E11 (1988) Electrical activity of Yb in InP
002E50 (1987) Modélisation de la barrière de Schottky en présence d'états d'interface distribués spatialement

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
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   |area=    IndiumV3
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   |clé=    Acceptor center
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