AD conversion < AES < AND circuit

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000362 (2010)		AES, LEED and PYS investigation of Au deposits on InSe/Si( 1 1 1) substrate
000450 (2009)		Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000498 (2008)		Study by EELS and EPES of the stability of InPO4/InP system
000607 (2008)		AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
000908 (2005)		Passivation of InP(100) substrates : first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies
000B80 (2004)		Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
000C89 (2003)		Study and improvement of interfacial properties in a MIS structure based on p-type InP
000D68 (2003)		First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
000E97 (2002)		The study of InPO4/InP(100) by EELS and AES
000F12 (2002)		Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy
001195 (2001)		Nitridation of InP(100) surface studied by AES and eels spectroscopies
001378 (2000)		Structure of Fe layers grown on InAs(100)
001444 (2000)		Growth and optimization of InAs/GaSb and GaSb/InAs interfaces
001518 (1999-11)		Réalisation par épitaxie en phase vapeur par la méthode aux hydrures de puits quantiques contraints InAsxP1-x/InP
001525 (1999-10)		Réalisation de structures métal/isolant/semi-conducteur. Etude par spectroscopies électroniques et caractérisations électriques
001753 (1999)		Effect of Cu on InSe/Si(111) heterojunctions
001960 (1998)		Passivation of III-V compounds used for metal-insulator, InP(100) structures
001B10 (1997-07)		CONTRIBUTION A L ETUDE DES PROPRIETES DES HETEROJONCTIONS FORMEES PAR DES COMPOSES LAMELLAIRES (InSe OU GaSe) EPITAXIES SUR DU Si(111)
001C46 (1997)		Ion beam modification of InSe surfaces
001F18 (1996)		Interface properties of MBE grown InSe/Si(111) heterojunctions
001F43 (1996)		Fabrication and characterization of ITO thin films deposited by excimer laser evaporation

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