Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Z. Djebbour »
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Z. D. Kvon < Z. Djebbour < Z. Dridi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000116 (2012) Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000203 (2011) Investigation of the metastability behavior of CIGS based solar cells with ZnMgO-Zn (S,O,OH) window-buffer layers
000209 (2011) Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy
000297 (2010) Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000331 (2010) Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers
000861 (2006) Admittance spectroscopy of cadmium free GIGS solar cells heterointerfaces
000C90 (2003) Studies of buried interfaces Cu(In, Ga)Se2/CdS XPS and electrical investigations
000E07 (2003) Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In, Ga)Se2 and a-Si:H cases
000E92 (2002) XPS and electrical studies of buried interfaces in Cu(In, Ga)Se2 solar cells

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Copper selenides
6Gallium selenides
6Indium selenides
6Solar cell
4Buffer layer
3Electronic density of states
3Experimental study
3Interface
3Voltage current curve
2Cadmium sulfide
2Concentration distribution
2Defect density
2Electric admittance
2Gallium
2Gallium phosphide
2Illumination
2MOVPE method
2Metastable state
2Photoelectric current
2Quaternary compound
2Semiconductor materials
2Solar cells
2Thermal annealing
2X-ray photoelectron spectra
2Zinc oxide
2Zinc sulfide
1Absorption spectra
1Acceptor center
1Activation energy
1Admittance
1Americium
1Amorphous hydrogenated material
1Amorphous state
1Atomic layer method
1Band structure
1Binary compound
1Boron
1Buried layer
1Capacitance
1Chemical bath deposition
1Chemical composition
1Chemical vapor deposition
1Coated material
1Copper
1Copper sulfide
1Cross section
1Crystal growth from vapors
1Dark field microscopy
1Dimensionality
1Dispersion
1Donor center
1Electrical conductivity
1Electrical properties
1Electronic properties
1Energy gap
1Epitaxial layers
1Equivalent circuits
1Fabrication property relation
1Fluctuations
1Free carrier
1Frequency dependence
1Gallium Indium Nitrides Mixed
1Gallium nitride
1Heterointerface
1Heterojunction
1Hysteresis
1II-VI semiconductors
1Impurity
1Indium
1Indium nitride
1Indium sulfide
1Interface defect
1Interfacial layer
1Mismatch lattice
1Numerical simulation
1Optical properties
1Optical reflection
1Optical transmission
1Performance evaluation
1Photoconductivity
1Photoelectron spectrometry
1Photoluminescence
1Photovoltaic cell
1Photovoltaic system
1Polycrystals
1Pseudomorphic growth
1Quaternary alloys
1Rectifying contact
1Scanning transmission electron microscopy
1Secondary ion mass spectrometry
1Shallow level
1Silicon
1Software
1Stacking sequence
1Strain energy
1Surface photovoltage
1Temperature dependence
1Thermal properties
1Thin film devices
1VPE

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