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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Z. Benamara »
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Z. Ben Ayadi < Z. Benamara < Z. Benamarra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000795 (2006) Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis
000B80 (2004) Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
000C89 (2003) Study and improvement of interfacial properties in a MIS structure based on p-type InP
001192 (2001) Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony
001262 (2001) Effect of InSb buffer layer in MIS structures based on InP
001462 (2000) Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
001744 (1999) Electrical study of the Au/InSb/InP system
001746 (1999) Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
001763 (1999) Characterization of the M.S structure by the surface photoelectrical voltage method
001970 (1998) Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
001C81 (1997) Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates
001E70 (1996) Study of Al2O3 condensation on Si(100) and InP(100) substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Indium phosphides
6Experimental study
5Gold
5Indium antimonides
4CV characteristic
4Semiconductor materials
3Aluminium oxides
3Binary compound
3Binary compounds
3Buffer layer
3IV characteristic
3MIS structures
3Schottky barrier diodes
2AES
2Barrier height
2Electrical conductivity
2Electron beam evaporation
2III-V compound
2Indium Phosphides
2Interface electron state
2Interface structure
2Interfacial layer
2Microelectronic fabrication
2Nitridation
2Passivation
2Schottky barrier diode
2Schottky barriers
2Surface treatments
2Thin film
2Voltage capacity curve
1Activation energy
1Alumina
1Aluminium oxide
1Annealing
1Antimony additions
1Characterization
1Charge exchange
1Chemical bonds
1Chemical treatment
1Computer simulation
1Core levels
1Coverage rate
1Crystal growth
1Deep level
1Defect density
1Defect states
1Dember effect
1Diffusion
1Digital simulation
1Donor center
1Doping
1Electrical characteristic
1Electrical properties
1Electron mobility
1Impurity density
1Incidence angle
1Indium Antimonides
1Indium nitrides
1Indium phosphide
1Inorganic compounds
1Interface defect
1Interface state
1MIS structure
1Materials preparation
1Metal-semiconductor contacts
1Metallic bonds
1Modelling
1Monocrystals
1Network analysis
1Nitrogen
1Photovoltage
1Plasma assisted processing
1Poisson equation
1Rectifying contact
1Schottky effect
1Silicon
1Stacking sequence
1Steady state
1Surface barrier
1Surface electron state
1Surface layers
1Temperature dependence
1Theoretical study
1Thermionic electron emission
1Ultrathin films
1Vapor deposition
1Voltage current curve
1X-ray photoelectron spectra

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "Z. Benamara" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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