Y. Moelo < Y. Monteil < Y. Mourier

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000362 (2010)		AES, LEED and PYS investigation of Au deposits on InSe/Si( 1 1 1) substrate
000428 (2009)		Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
000498 (2008)		Study by EELS and EPES of the stability of InPO4/InP system
000607 (2008)		AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
000B33 (2004)		Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells
000B54 (2004)		Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
000B89 (2004)		Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000D18 (2003)		Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response
001414 (2000)		Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001455 (2000)		Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
001571 (1999-05-15)		Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001647 (1999)		Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999)		Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001694 (1999)		NO2 sensor based on InP epitaxial thin layers
001714 (1999)		Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001729 (1999)		Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
001848 (1998-07-01)		A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001B94 (1997)		The strength of indium phosphide based microstructures
001C87 (1997)		Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D06 (1997)		Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images

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List of associated KwdEn.i

Nombre de documents	Descripteur
19	Experimental study
19	Semiconductor materials
13	Gallium arsenides
13	Indium phosphides
12	Atomic force microscopy
11	Photoluminescence
10	Indium arsenides
9	Binary compounds
9	MOVPE method
8	Epitaxial layers
8	Ternary compounds
7	Crystal growth from vapors
7	Precursor
6	Indium Phosphides
5	Epitaxy
5	III-V semiconductors
4	AES
4	Indium phosphide
4	Mismatch lattice
4	Morphology
4	Optical properties
4	Organometallic compound
4	Thin film
4	Thin films
4	VPE
3	EEL spectroscopy
3	Experimental result
3	Growth from vapor
3	Growth mechanism
3	Hall effect
3	Heterojunctions
3	Inorganic compound
3	Inorganic compounds
3	MOCVD
3	Quantum wells
3	Semiconductor epitaxial layers
3	Surface structure
3	Surfaces
3	Vicinal surface
2	Aluminium Indium Arsenides Mixed
2	Annealing
2	Arsine
2	Binary compound
2	Crystal growth
2	Crystal orientation
2	Dislocations
2	Electron beams
2	III-V compound
2	Indium compounds
2	Interface electron state
2	Layer thickness
2	Low temperature
2	Operating mode
2	Organic arsine
2	Oxidation
2	Physical radiation effects
2	Semiconductor growth
2	Simulation
2	Substrates
2	Tertiary arsine
2	Waveform
2	XRD
1	Alloying effects
1	Aluminium Gallium Indium Arsenides Mixed
1	Aluminium Indium Arsenides
1	Aluminium arsenides
1	Analysis method
1	Argon ions
1	Atmospheric pressure
1	Auger electron spectrometry
1	Band offset
1	Bipolar transistors
1	Boron additions
1	Buffer layer
1	CV characteristic
1	CVD
1	CVD coatings
1	Carbon additions
1	Carrier density
1	Charge carrier recombination
1	Chemical beam epitaxy
1	Chemical bonds
1	Chemical composition
1	Chemical sensors
1	Clean surface
1	Composition effect
1	Contamination
1	Crystal doping
1	Deposition
1	Differential scanning calorimetry
1	Diffusion
1	Dislocation density
1	Doped materials
1	Electromechanical device
1	Electron diffraction
1	Electron mobility
1	Electron spectra
1	Electron-hole recombination
1	Energy band
1	Energy dependence

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