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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. Jin »
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Y. Jestin < Y. Jin < Y. Jin-Delorme  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001A00 (1998) HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization
001D78 (1996-07-01) Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
001F51 (1996) Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview
002063 (1995-03-01) Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors
002386 (1994) Low temperature low voltage operation of HEMTs on InP
002400 (1994) High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002667 (1993) Gate length electric parameter dependences of ultra-submicrometre δ-doped pseudomorphic HEMTs
002714 (1993) Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's

List of associated KwdEn.i

Nombre de
documents		Descripteur
6High electron mobility transistor
5Experimental study
5Gallium Arsenides
4Semiconductor device
3Cryogenic temperature
3Indium Phosphides
2Aluminium Arsenides
2Binary compound
2Cut off frequency
2Field effect transistor
2Gallium Indium Arsenides Mixed
2III-V compound
2Indium Arsenides
2Low temperature
2Performance characteristic
2Transport process
2Voltage current curve
1Aluminium Gallium Arsenides
1Aluminium Gallium Arsenides Mixed
1Aluminium Indium Arsenides Mixed
1Amorphous state
1Defect states
1Electrical characteristic
1Electrical properties
1Electroluminescence
1Electron mobility
1Emission spectra
1Field effect transistors
1Gallium arsenides
1Indium Gallium Arsenides
1Indium arsenides
1Leakage current
1Low frequency circuit
1Low noise circuit
1Low power
1Low temperature service behaviour
1Microelectronic fabrication
1Microwave device
1Microwave transistor
1Noise spectrum
1Performance
1Planar doping
1Pseudomorphic device
1Quaternary compound
1Radiofrequency
1Recombination
1Size effect
1Temperature dependence
1Ternary compound
1Ternary compounds
1Transconductance
1Transistor gate
1Transition frequency
1s parameter

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "Y. Jin" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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