Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. I. Nissim »
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Y. I. Kim < Y. I. Nissim < Y. J. Chabal  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001634 (1999) Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
002385 (1994) Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps
002731 (1993) Bulk and surface properties of RTCVD Si3N4 films for optical device applications
002912 (1992) Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
002A99 (1990) Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates
002B98 (1990) A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications
002D36 (1988) Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
002D75 (1988) Low-pressure photochemical vapour deposition of silicon dioxide on InP substrates
002E92 (1987) Recrystallization kinetics pattern in III-V implanted semiconductors
002F90 (1986) Solid phase epitaxial regrowth of ion-implanted amorphized InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Indium Phosphides
5Chemical vapor deposition
4Experimental study
3Silicon Oxides
2Deposition
2Epitaxy
2III-V compound
2Inorganic compound
2Microelectronic fabrication
2Photochemical method
2Recrystallization
2Thin film
1Amorphization
1Application
1Arsenic Atomic ions
1Auger electron spectrometry
1Binary compound
1Binary compounds
1CVD
1Carrier mobility
1Characterization
1Chemical composition
1Chromium
1Crystal growth
1Dielectric materials
1Electric breakdown of solids
1Electric currents
1Electron diffraction
1Electron transport properties
1Flash photolysis
1Gallium Indium Arsenides Mixed
1Group IIIB metal Antimonides
1Group IIIB metal Arsenides
1Group IIIB metal Phosphorus
1Growth from solid state
1High breakdown voltage transistors
1High electron mobility transistors
1III-V semiconductors
1Impact ionization
1Impurity
1Indium phosphides
1Infrared absorption
1Infrared spectrometry
1Interface
1Ion implantation
1Iron
1Kinetics
1MIS structure
1Morphology
1Optical properties
1Oxide layer
1Photochemical reaction
1Photoelectron spectrometry
1Pulse lamp
1Rapid thermal annealing
1Refractive index
1Semiconducting indium gallium arsenide
1Semiconducting indium phosphide
1Semiconductor device manufacture
1Semiconductor device structures
1Semiconductor growth
1Semiconductor materials
1Silica
1Silicon Nitrides
1Silicon nitrides
1Solid solution
1Stacking fault
1Substrate
1Supports
1Surface analysis
1Technology
1Temperature
1Theory
1Thickness
1Thin films
1Transmission electron microscopy
1Ultraviolet irradiation
1Ultraviolet radiation
1Voltage capacity curve

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