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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. Androussi »
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Y. Amira < Y. Androussi < Y. Aoki  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000C47 (2003-04-01) Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000D42 (2003) Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
000F71 (2002) Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands
001213 (2001) LACBED measurement of the chemical composition of a thin InxGa1-x as layer buried in a GaAs matrix
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
001543 (1999-08-15) High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001544 (1999-08-15) A finite-element study of strain fields in vertically aligned InAs islands in GaAs
001635 (1999) Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots
001925 (1998) Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001D58 (1996-09-01) Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
001F59 (1996) Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures
002044 (1995-06-19) Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002260 (1994-08-29) Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures
002857 (1992) Intrinsic strain at slightly mismatched InGaAs/InP interfaces as studied by transmission electron microscopy

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12Gallium arsenides
10Indium arsenides
7Stress relaxation
7TEM
5Finite element method
5III-V semiconductors
5Molecular beam epitaxy
5Semiconductor materials
4Transmission electron microscopy
3Binary compounds
3Chemical composition
3Epitaxial layers
3Heterojunctions
3Indium compounds
3Island structure
3Morphology
3Surfaces
3Ternary compounds
2Aluminium arsenides
2Atomic force microscopy
2Buffer layer
2Dislocations
2Quantum dots
2Roughness
2Semiconductor quantum dots
2Strained layer
2Theoretical study
2Thin films
1Aluminium compounds
1Buried layers
1Coalescence
1Crystal faces
1Crystal growth
1Crystal growth from vapors
1Crystal nucleation
1Dark field microscopy
1Deformation
1Dimensions
1Dislocation
1Displacement field
1Dynamic model
1Elastic deformation
1Elasticity
1Fabrication structure relation
1Film growth
1Fourier analysis
1Gallium Indium Arsenides Mixed
1Geometrical shape
1Graded junction
1Heterojunction
1High electron mobility transistor
1High electron mobility transistors
1Image analysis
1Image contrast
1Indium Phosphorus
1Inorganic compound
1Internal strains
1Internal stresses
1Lattice relaxation
1Measurement errors
1Metamorphic transistor
1Microelectronic fabrication
1Microstructure
1Misfit dislocations
1Mismatch lattice
1Moire deflectometry
1Moire fringes
1Nucleation
1Operating mode
1Plastic deformation
1STM
1Semiconductor device measurement
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Semiconductor thin films
1Solid solid interface
1Solid source molecular beam epitaxy
1Solid-solid interfaces
1Stresses
1Substrates
1Surface diffusion
1Surface segregation
1Surface structure
1Temperature effect
1Ternary compound
1Thickness
1Thin film
1X-ray chemical analysis

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