X. Wallaert < X. Wallart < X. Wu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000189 (2011)		On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
000598 (2008)		Ballistic nanodevices for high frequency applications
000666 (2007)		MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000720 (2007)		Ballistic nano-devices for high frequency applications
000748 (2006)		Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000841 (2006)		Dwell-time related saturation of phase coherence in ballistic quantum dots
000954 (2005)		High performances of InP channel power HEMT at 94 GHz
000955 (2005)		High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
000989 (2005)		Dwell-time-limited coherence in open quantum dots
000A14 (2005)		As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000A22 (2005)		94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000A61 (2004)		Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
000B38 (2004)		InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004)		InAlAs-InGaAs double-gate HEMTs on transferred substrate
000B74 (2004)		Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
000C03 (2003-12-15)		Experimental and theoretical investigation of Ga1-xInxAs surface reactivity to phosphorus
000E15 (2002-12-15)		Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000E42 (2002-08-05)		Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments
001101 (2001-05-07)		Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy
001240 (2001)		Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

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List of associated KwdEn.i

Nombre de documents	Descripteur
22	Experimental study
21	III-V semiconductors
14	Gallium arsenides
11	Indium compounds
10	Indium arsenides
10	Molecular beam epitaxy
10	Photoluminescence
9	Indium phosphides
7	Heterostructures
7	High electron mobility transistor
7	III-V compound
7	Interface structure
7	Ternary compounds
6	Gallium phosphides
6	RHEED
5	Atomic force microscopy
5	Ballistic transport
5	Crystal growth from vapors
5	GSMBE method
5	Gallium compounds
5	Indium phosphide
5	Semiconductor growth
5	Theoretical study
4	Semiconductor epitaxial layers
4	Semiconductor materials
4	X-ray photoelectron spectra
3	Aluminium arsenides
3	Aluminium compounds
3	Binary compounds
3	Buffer layer
3	Chemical beam epitaxy
3	Chemical composition
3	Electron mobility
3	Growth mechanism
3	Hall mobility
3	High electron mobility transistors
3	Nanostructures
3	Performance evaluation
3	Quantum dots
3	Quantum wells
3	Semiconductor heterojunctions
3	Strained layer
3	Surface reconstruction
3	Ternary compound
3	Thin films
3	Transconductance
2	Binary compound
2	Coherence
2	Composite material
2	Doping
2	Drain voltage
2	GHz range
2	Gallium Arsenides
2	High performance
2	Indium Arsenides
2	Indium Phosphides
2	Microelectronic fabrication
2	Nanotechnology
2	Output power
2	Photoelectron spectroscopy
2	Power gain
2	Power transistor
2	Room temperature
2	Schroedinger equation
2	Segregation
2	Semiconductor quantum dots
2	Solid solutions
2	Stress relaxation
2	Surface segregation
2	Thickness
2	Transistor channel
2	X radiation
1	Aharonov-Bohm effect
1	Aluminium Arsenides
1	Aluminium antimonides
1	Ambient temperature
1	Bipolar transistors
1	Buried layers
1	Capacitance
1	Carbon additions
1	Carrier density
1	Chemical interdiffusion
1	Composition effect
1	Compressive stress
1	Coplanar technology
1	Coplanar waveguides
1	Critical size
1	Current density
1	Current fluctuations
1	Current rectifier
1	Cut off frequency
1	Depth profiles
1	Dislocation density
1	Drain current
1	Effective mass
1	Elastic deformation
1	Electrical characteristic
1	Electrical properties
1	Electron density
1	Electron temperature

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