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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « W. Knap »
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W. Knafo < W. Knap < W. Lengauer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000039 (2013) Nanowire-based field effect transistors for terahertz detection and imaging systems : TERAHERTZ NANOTECHNOLOGY
000576 (2008) Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000760 (2006) Superconductivity of InN with a well defined Fermi surface
000876 (2005) Terahertz investigation of high quality indium nitride epitaxial layers
000877 (2005) Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000F03 (2002) Subterahertz detection by high electron mobility transistors at large forward gate bias
001847 (1998-07-01) Far infrared spectroscopy with high resolution cyclotron resonance filters
001886 (1998-02-15) Optically induced nuclear magnetic field in InP
001E28 (1996-02-15) Weak antilocalization and spin precession in quantum wells
002164 (1995) Infrared reflectivity and electrical parameters of Zn-doped degenerate CuInSe2
002422 (1994) Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
002880 (1992) Improved performance of magnetically tunable GaAs and InP far-infrared detectors

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
5Gallium arsenides
5III-V semiconductors
3Indium arsenides
3Indium compounds
3Magnetic field effects
3Plasmons
3THz range
2Carrier density
2Cyclotron resonance
2Electron mobility
2Field effect transistors
2Gallium Arsenides
2High electron mobility transistors
2Indium Phosphides
2Indium nitrides
2Infrared spectra
2Inorganic compounds
2Magnetoresistance
2Semiconductor materials
2Ternary compounds
2Two-dimensional electron gas
1Aluminium arsenides
1Aluminium compounds
1Aluminium nitride
1Ambient temperature
1Barrier layer
1Binary compound
1Carrier lifetime
1Charge density
1Copper selenides
1DNMR
1Delay time
1Detectors
1Dielectric function
1Doped materials
1Doping
1Dynamic nuclear polarization
1Electric field effects
1Electromagnetic wave propagation
1Electron density
1Electron relaxation time
1Electrostatic wave
1Epitaxial layers
1Far infrared radiation
1Fermi surface
1Field effect transistor
1Fluctuations
1Gallium Indium Arsenides Mixed
1Gallium Phosphides
1Gallium nitride
1Gate current
1Gates
1Hanle effect
1Heterostructures
1High electron mobility transistor
1III-V compound
1Imaging
1Indium Arsenides
1Indium nitride
1Indium selenides
1Infrared spectrometers
1Infrared spectroscopy
1Instability
1Logic gates
1MOCVD
1Magnetic circuit
1Measurement sensor
1Measuring methods
1Modeling
1Molecular beam epitaxy
1Momentum density
1Nanostructured materials
1Nanostructures
1Nanowires
1Negative differential conductivity
1Non contact measurement
1Notch filters
1Optical double resonance
1Optical filters
1Optical materials
1Optical method
1Optical properties
1Optical pumping
1Permittivity
1Phase shift
1Phonons
1Plasma
1Plasma instability
1Plasma temperature
1Plasma waves
1Plasmonics
1Quantum magnetic field
1Quantum well
1Quaternary compound
1Radiation detector
1Radiation sources
1Reflection spectrum
1Reliability
1Response function

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