Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « V. Souliere »
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V. Skarka < V. Souliere < V. Stambouli  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
001414 (2000) Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001571 (1999-05-15) Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001648 (1999) Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001694 (1999) NO2 sensor based on InP epitaxial thin layers
001B94 (1997) The strength of indium phosphide based microstructures
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D06 (1997) Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images
001D14 (1997) Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile : Application to an InP/Ga0.47In0.53As/InP single quantum well
002007 (1995-10-15) Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition
002743 (1993) A new organoindium precursor for electronic materials
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
6Indium phosphides
6Semiconductor materials
5Atomic force microscopy
5Gallium arsenides
5Indium arsenides
5MOVPE method
4Binary compounds
4Epitaxial layers
4Precursor
3Crystal growth from vapors
3Photoluminescence
3Ternary compounds
3Thin film
2Arsine
2Crystal growth
2Crystal orientation
2Epitaxy
2Experimental result
2Growth from vapor
2Indium Phosphides
2Operating mode
2Optical properties
2Organic arsine
2Organometallic compound
2Substrates
2Surface structure
2Surfaces
2Tertiary arsine
2Vicinal surface
2Waveform
1Aluminium arsenides
1Analysis method
1Annealing
1Band offset
1Binary compound
1CV characteristic
1CVD
1Carrier density
1Chemical composition
1Chemical sensors
1Composition effect
1Differential scanning calorimetry
1Diffusion
1Dislocations
1Doped materials
1Electromechanical device
1Electron-hole recombination
1Energy spectrum
1Gas detector
1Growth mechanism
1Heterojunctions
1III-V compound
1III-V semiconductors
1Indium compounds
1Indium phosphide
1Injection laser
1Inorganic compound
1Inorganic compounds
1Interface electron state
1Interface structure
1Interruption
1Layer thickness
1Light emission
1Line width
1Low temperature
1Luminescence spectrum
1MOCVD
1Material composition
1Mechanical properties
1Micromachining
1Micromechanical devices
1Mismatch lattice
1Modeling
1Monolayers
1Morphology
1Nitrogen dioxide
1Ohmic contacts
1Optoelectronic devices
1Polarization spectrometry
1Pressure
1Properties of materials
1Quantitative analysis
1Quantity ratio
1Quantum wells
1Raman spectrum
1Rectilinear polarization
1Resistor
1Response functions
1Roughness
1Saturation
1Screw dislocations
1Semiconductor epitaxial layers
1Semiconductor growth
1Sensitivity
1Sequence
1Structural analysis
1Surface reconstruction
1Ternary alloy
1Ternary compound

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