IndiumV3, France, Analysis, indexItem, Author.i, V. Drouot

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List of bibliographic references

Number of relevant bibliographic references: 13.

Ident.	Authors (with country if any)	Title
001419 (2000)		Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
001568 (1999-05-31)		Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22)		Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001668 (1999)		Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001820 (1998-10-15)		Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
001998 (1998)		High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm
001A63 (1997-11-10)		Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
001F48 (1996)		Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well
002072 (1995-02-15)		High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions
002080 (1995-01-02)		Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
002744 (1993)		A new encapsulation method of InP during post implantation annealing
002919 (1992)		Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy

List of associated KwdEn.i

Nombre de documents	Descripteur
12	Experimental study
8	Indium arsenides
7	Photoluminescence
6	Gallium arsenides
6	III-V semiconductors
5	Atomic force microscopy
5	Molecular beam epitaxy
4	GSMBE method
4	Indium compounds
4	Indium phosphides
4	Semiconductor epitaxial layers
4	Semiconductor materials
4	Semiconductor quantum dots
3	Binary compounds
3	Chemical beam epitaxy
3	Crystal growth from vapors
3	Heterojunctions
3	Island structure
3	Semiconductor growth
3	Ternary compounds
2	Dimensions
2	Epitaxial layers
2	Heterostructures
2	Mismatch lattice
2	Morphology
2	Quantum dots
2	Stress relaxation
2	TEM
2	Thin films
1	Aluminium arsenides
1	Annealing
1	Compressive stress
1	Coverage rate
1	Crystal growth
1	Crystal orientation
1	Density
1	Dislocation
1	Doped materials
1	Elasticity
1	Electron mobility
1	Encapsulation
1	Epitaxy
1	Gallium Indium Arsenides Mixed
1	Growth from vapor
1	Growth mechanism
1	High temperature
1	Indium Arsenides
1	Indium Phosphides
1	Interfaces
1	Internal strains
1	Ion beam mixing
1	Ion implantation
1	Iron additions
1	Misfit dislocations
1	Modulation
1	Molecular beam condensation
1	Monolayers
1	Operating mode
1	Ordering
1	Plasma etching
1	Quantum wells
1	Recrystallization
1	Reflection high energy electron diffraction
1	Roughness
1	SIMS
1	Scattering
1	Schottky barrier diodes
1	Self-assembled layers
1	Silicon additions
1	Silicon ions
1	Solid-solid interfaces
1	Spatial distribution
1	Stoichiometry
1	Structure relaxation
1	Substrates
1	Surface cleaning
1	Surface structure
1	Surface treatments
1	Temperature range 0-13 K
1	Ternary alloys
1	Theoretical study
1	Thermodesorption
1	Thickness

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « V. Drouot »