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Index « Auteurs » - entrée « T. Taliercio »
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T. Takamoto < T. Taliercio < T. Tamamura  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000C01 (2003-12-15) Isoelectronic traps in heavily doped GaAs:(In,N)
000C30 (2003-07-15) Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
000E21 (2002-11-15) Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000E82 (2002-01-21) Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002) The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
001114 (2001-03-12) Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26) High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001187 (2001) Optical properties of self-assembled InGaN/GaN quantum dots
001265 (2001) Dual contribution to the stokes shift in InGaN-GaN Quantum wells
001269 (2001) Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
001276 (2001) Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Photoluminescence
9Experimental study
7III-V semiconductors
7Time resolved spectra
6Gallium nitrides
5Gallium compounds
5Indium compounds
5Indium nitrides
5Semiconductor materials
5Semiconductor quantum wells
5Ternary compounds
4Binary compounds
3Electron localization
3Interface states
3Quantum dots
3Quantum wells
2Aluminium compounds
2Charge carriers
2Electric field effects
2Electron hole pair
2Electron-hole recombination
2Excitons
2Fluctuations
2Gallium arsenides
2Impurity states
2Molecular beam epitaxy
2Quantum effect
2Radiative recombination
2Semiconductor quantum dots
2Stark effect
2Theoretical study
2Wide band gap semiconductors
1Aluminium nitrides
1Carrier mobility
1Confinement
1Continuous wave
1Electric fields
1Electro-optical effects
1Electron-phonon interactions
1Energy levels
1Envelope function
1Exciton phonon interaction
1Growth mechanism
1Heavily doped semiconductors
1High field
1Holes
1Indium
1Indium arsenides
1Island structure
1Line intensity
1Line widths
1Localized states
1Luminescence
1Luminescence decay
1Mechanical strength
1Multiple quantum well
1Nitrogen
1Non radiative recombination
1Nonradiative transitions
1Optical phonons
1Optical properties
1Phonon-exciton interactions
1Photoreflectance
1Piezoelectricity
1Recombination
1Self-assembled layers
1Spectral shift
1Spontaneous polarization
1Stokes shift
1Temperature dependence
1Ternary alloys
1Time resolved spectroscopy
1Zero phonon process

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