Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « T. Suski »
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T. Suemitsu < T. Suski < T. Takamoto  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000309 (2010) In-clustering effects in InAlN and InGaN revealed by high pressure studies
000804 (2006) Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000A70 (2004) Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
000C53 (2003-03-10) Determination of built-in electric fields in quaternary InAlGaN heterostructures
000E21 (2002-11-15) Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000F25 (2002) Small built-in electric fields in quaternary InAIGaN heterostructures
001078 (2001-09-15) Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
002082 (1995-01-01) Two-dimensional electron gas mobility anomalies (and enhancement) in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Experimental study
4III-V semiconductors
4Photoluminescence
3Gallium compounds
3Heterostructures
3Indium compounds
3Indium nitrides
3Pressure effects
3Semiconductor quantum wells
3Time resolved spectra
2Aluminium compounds
2Electron mobility
2Energy gap
2Gallium nitrides
2Hydrostatic pressure
2Localized states
2Quaternary compounds
2Theoretical study
1Aluminium Indium Nitrides Mixed
1Aluminium arsenides
1Aluminium nitrides
1Anomalous properties
1Band structure
1Bowing parameter
1Carrier density
1Defect states
1Dielectric polarization
1Donor center
1Doped materials
1Doping
1Electric field effects
1Electric fields
1Electro-optical effects
1Electron gas
1Gallium arsenides
1Hall effect
1Hexagonal lattices
1High pressure
1High-pressure effects
1Impurity states
1Indium Gallium Nitrides Mixed
1Indium arsenides
1Interface states
1Internal field
1Lattice relaxation
1Line intensity
1Luminescence decay
1Molecular beam epitaxy
1Nonradiative transitions
1Optical constants
1Piezo-optical effects
1Piezoelectric semiconductors
1Quantity ratio
1Quantum wells
1Resonant states
1Screening
1Semiconductor epitaxial layers
1Semiconductor quantum dots
1Silicon additions
1Temperature effects
1Ternary compounds
1Two-dimensional systems
1Valence bands
1Visible spectra
1Wide band gap semiconductors

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