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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Tatarenko »
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S. Tardon < S. Tatarenko < S. Taunier  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001E07 (1996-05) Dopage des matériaux semiconducteurs II-VI à base de tellure et réalisation de structures quantiques
002033 (1995-08-14) Iodine doping of CdTe and CdZnTe layers grown by molecular beam epitaxy
002306 (1994-03-14) Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass
002416 (1994) Electron-gas screening of the piezoelectric fields in indium-doped (211) CdTe/Cd1-xZnxTe quantum wells
002555 (1993) Spectroscopy of donors and donor-bound excitons in CdTe/Cd1-xZnxTe multiple quantum wells
002648 (1993) Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxy
002703 (1993) Donor doping of (211) CdTe epilayers and CdTe/CdZnTe piezoelectric heterostructures by molecular beam epitaxy
002704 (1993) Donor activation efficiency and doping profile quality in In-doped CdTe and CdZnTe quantum structures
002870 (1992) Indium doping of CdTe layers and CdTe/Cd1-xZnxTe microstructures
002871 (1992) Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy : uniformly and planar-doped layers, quantum wells, and superlattices
002A08 (1991) Luminescence characterization of CdTe:In grown by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
5Cadmium Tellurides
5Doping
5Photoluminescence
4Molecular beam condensation
4Semiconductor materials
3Cadmium Zinc Tellurides Mixed
3Cadmium tellurides
3Epitaxy
3Indium
3Quantum wells
2Binary compounds
2Carrier density
2Charge carrier concentration
2Charge carrier mobility
2Crystal doping
2Donor center
2Doped materials
2Epitaxial film
2Impurity density
2Indium additions
2Inorganic compound
2Molecular beam epitaxy
2Screening
2Ternary compounds
2Thin film
2Zinc tellurides
1Absorption spectrometry
1Annealing
1Annihilation
1Bound exciton
1Carrier mobility
1Charge compensation
1Chlorine additions
1Congress
1Crystal defects
1Crystal face
1Crystal structure
1Donors
1Doping profile
1Electric field effects
1Electrical properties
1Electron gas
1Electron mobility
1Emission spectrometry
1Epitaxial layers
1Growth from vapor
1Heterojunctions
1II-VI semiconductors
1Impurity
1Interdiffusion
1Iodine additions
1Kinetics
1Lattice parameters
1Mismatch lattice
1Modulation doping
1Multiple quantum well
1N-type conductors
1Operating mode
1Optical properties
1Optical spectrometry
1Optoelectronic devices
1Photoelectron emission
1Photoelectron spectrometry
1Planar doping
1Polycrystals
1Positron probes
1Pressure
1Quantum well
1Secondary ion mass spectrometry
1Stresses
1Superlattice
1Thin films
1Transition metal Compounds
1Transmission electron microscopy
1Vacancies
1X ray
1X ray diffraction

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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