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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Ruffenach »
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S. Romdhane < S. Ruffenach < S. Ruffenack  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000082 (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000219 (2011) Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000411 (2009) Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000420 (2009) Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000421 (2009) MOVPE growth of InN buffer layers on sapphire
000438 (2009) InN excitonic deformation potentials determined experimentally
000452 (2009) Growth of InN films and nanostructures by MOVPE
000474 (2009) Alternative precursors for MOVPE growth of InN and GaN at low temperature
000876 (2005) Terahertz investigation of high quality indium nitride epitaxial layers
000896 (2005) Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms
000A89 (2004) Raman scattering in hexagonal InN under high pressure
000B92 (2004) Absorption and Raman scattering processes in InN films and dots
000C14 (2003-10-06) Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Indium nitride
8MOVPE method
7III-V semiconductors
6MOCVD
5III-V compound
5Photoluminescence
5Thin films
5VPE
4Carrier density
4Epitaxial layers
4Gallium nitride
4Growth mechanism
4Indium nitrides
4Semiconductor materials
3Doping
3Raman spectra
2Ammonia
2Atomic force microscopy
2Buffer layer
2Dielectric function
2Energy gap
2Experimental study
2Free electron
2Hydrogen additions
2Inorganic compounds
2Optical phonons
2Optical properties
2Phonons
2Thermal annealing
1Absorption spectra
1Activation energy
1Adatoms
1Binary compounds
1CVD
1Carbon
1Carrier lifetime
1Charge density
1Columnar structure
1Crystal chemistry
1Crystal faces
1Crystal perfection
1Crystal structure
1Cyclotron resonance
1Damage
1Defect density
1Deformation potential
1Depth profiles
1Dimensionality
1Dislocation density
1Dislocations
1Droplets
1Electronic properties
1Fluctuations
1Frequency dependence
1Gallium Nitrides
1Grain size
1Growth rate
1Grueneisen constant
1Halides
1Heterostructures
1Hexagonal crystals
1High pressure
1Hydrostatic pressure
1Hysteresis
1Impurities
1Impurity density
1Indium
1Indium Nitrides
1Indium compounds
1Inelastic scattering
1Interfaces
1Lateral growth
1Light scattering
1Line shape
1Line widths
1Magnetic field effects
1Microstructure
1Molecular beam epitaxy
1Momentum density
1Nanostructures
1Nanotechnology
1Nitridation
1Non contact measurement
1Non radiative recombination
1Operating conditions
1Optical characteristic
1Optical method
1Organic hydrazine
1Phase transformations
1Phonon mode
1Phonon-plasmon interactions
1Plasmons
1Point defects
1Precursor
1Quantum dots
1Recombination process
1Recrystallization
1Reflection spectrum
1Refractive index
1Robustness

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