Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Kret »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
S. Krawczyk < S. Kret < S. Krishna  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000205 (2011) Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000377 (2009) Three-dimensional localization of excitons in the InAs/GaAs wetting layer -magnetospectroscopic study
000A91 (2004) Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
000E60 (2002-06-01) Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
000F37 (2002) Quantitative measurement of In fluctuation inside MOCVD InGaN QWs
001543 (1999-08-15) High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001706 (1999) Local stress in highly strained coherent InGaAs islands
001A33 (1998) Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
4Ternary compounds
3Finite element method
3Fluctuations
3Indium arsenides
3Molecular beam epitaxy
3Quantum wells
3Semiconductor materials
3TEM
3Transmission electron microscopy
2Chemical composition
2Gallium nitrides
2III-V semiconductors
2Indium compounds
2Indium nitrides
2Island structure
2Photoluminescence
2Quantum dots
2Semiconductor epitaxial layers
2Thin films
1Atomic structure
1Circular polarization
1Defect structure
1Dislocations
1Electron microscopy
1Energy-level splitting
1Epitaxial layers
1Epitaxy
1Excitons
1Fourier analysis
1Gallium Indium Nitrides Mixed
1Gallium compounds
1Growth mechanism
1Heterojunctions
1Heterostructures
1High-resolution methods
1Image processing
1Indium nitride
1Inorganic compounds
1Lattice distortion
1Lattice image
1Localized exciton
1MOCVD
1MOVPE method
1Magnetic field effects
1Magneto-optical effects
1Modelling
1Quantitative chemical analysis
1Relaxation
1Self-assembled layers
1Semiconductor quantum wells
1Solid solutions
1Strain distribution
1Strained layer
1Stress relaxation
1Stresses
1Surface segregation
1Surface structure
1Thickness
1Trion
1Zeeman effect
1g-factor

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "S. Kret" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "S. Kret" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    S. Kret
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024