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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Koumetz »
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S. Koubaïti < S. Koumetz < S. Krawczyk  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000E00 (2003) Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
001272 (2001) Comparative models for diffusion of Be in InGaAs/InP heterostructures
001286 (2001) A model for diffusion of beryllium in InGaAs/InP heterostructures
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001482 (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001642 (1999) The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001778 (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A31 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A32 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing

List of associated KwdEn.i

Nombre de
documents		Descripteur
18Diffusion
17Beryllium additions
17Gallium arsenides
17Indium arsenides
16Experimental study
12Doped materials
10Semiconductor materials
10Ternary compounds
9Depth profiles
9Indium phosphides
8Epitaxial layers
8SIMS
7Rapid thermal annealing
6Gallium phosphides
5Annealing
5Doping
5GSMBE method
5Impurity diffusion
5Quaternary compounds
5Thin films
4Heterostructures
4III-V semiconductors
4Interstitials
3Binary compounds
3Mechanism
3Simulation
3Temperature dependence
3Theoretical study
2Boundary conditions
2Concentration distribution
2Diffusion coefficient
2Diffusion profile
2Digital simulation
2Heterojunctions
2Interstitial impurities
2Non equilibrium conditions
2Point defects
1Arrhenius equation
1Arsenides phosphides
1Beryllium
1Buried layers
1Chemical beam epitaxy
1Crystal defects
1Crystal growth from vapors
1Defect formation
1Diffusivity
1Doping profiles
1Finite difference method
1Gallium Arsenides phosphides
1Heat treatments
1Homojunctions
1III-V compound
1Impurities
1Impurity distribution
1Indium Arsenides phosphides
1Inorganic compounds
1Local equilibrium
1Microelectronic fabrication
1Modeling
1Modelling
1Phosphides
1Sandwich structures
1Segregation
1Solid-solid interfaces
1Substitutional impurities
1n-type conductors
1p-type conductors

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