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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. K. Krawczyk »
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S. K. Korchagina < S. K. Krawczyk < S. Kaciulis  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001C15 (1997) Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers
001C69 (1997) Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications
001F73 (1996) Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
002361 (1994) Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductors
002B08 (1990) Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B90 (1990) Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements
002E49 (1987) Mécanismes de dérives des transistors mis en silicium (Si) et en phosphure d'indium (InP)
002F49 (1987) Chemochemical polishing and etching of GaAs:In and GaAs in aqueous solutions of NaOCl
002F88 (1986) Study of InP surface treatments by scanning photoluminescence microscopy
003017 (1986) Indium exodiffusion in annealed GaAs:In crystals
003040 (1986) Characterization of the InP surface by photoluminescence imaging
003102 (1984) Photoluminescence and x-ray photoelectron spectroscopy measurements of InP surface treated by acid and base solutions

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Photoluminescence
9Semiconductor materials
8Experimental study
5Indium Phosphides
5Inorganic compound
3Gallium arsenides
3Impurity
3Indium arsenides
3Indium phosphides
3Scanning mode
3Surface treatment
3Ternary compounds
3Thin films
2Binary compounds
2Chemical etching
2Crystal defects
2Doping
2Doping profiles
2Epitaxial layers
2Gallium Arsenides
2III-V semiconductors
2Indium
2Lifetime
2Secondary ion mass spectrometry
1Acids
1Aluminium arsenides
1Ambient temperature
1Annealing
1Base
1Characterization
1Chemical polishing
1Compressive stress
1Crystal growth from vapors
1Deterioration
1Dislocation
1Dislocations
1Drift
1Electronic properties
1Excitation intensity
1Extended defect
1Field effect transistor
1GSMBE method
1Gas release
1High resolution
1III-V compound
1Imager
1Imaging
1Impurity diffusion
1Impurity distribution
1Iron
1Laser beam
1MIS transistor
1MOS transistor
1Mechanical polishing
1Miniaturization
1Molecular beam epitaxy
1Morphology
1Multilayer
1Multilayers
1Optical image
1Optical measurement
1Optical properties
1Photoelectron emission
1Quantum wells
1Relaxation
1Scanning
1Scanning microscope
1Selective area
1Silicon
1Strained superlattice
1Surface
1Tensile stress
1Theoretical study
1Thermal annealing
1Uniformity
1Wafer
1X ray

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