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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Gautier »
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S. Gauthier < S. Gautier < S. Gennari  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000116 (2012) Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000297 (2010) Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000321 (2010) Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A32 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Ternary compounds
5MOVPE method
4Beryllium additions
4Diffusion
4Doped materials
4Epitaxial layers
4Gallium arsenides
4Gallium nitride
4Indium arsenides
4Indium nitride
3Cathodoluminescence
3Experimental study
3Indium
3VPE
2Annealing
2Binary compounds
2Depth profiles
2Growth mechanism
2III-V compound
2III-V semiconductors
2SIMS
2Scanning transmission electron microscopy
2Secondary ion mass spectrometry
2Semiconductor materials
2Solar cells
2Theoretical study
2XRD
1Absorption spectra
1Aluminium
1Ammonia
1Boron
1Buffers
1Chemical etching
1Concentration distribution
1Cross section
1Cross sections
1Dark field microscopy
1Diffusion profile
1Digital simulation
1Dimensionality
1Dispersive spectrometry
1Electron microscopy
1Energy gap
1Epitaxy
1Etching
1Fluctuations
1Gallium Indium Nitrides Mixed
1Gallium phosphides
1Gallium sulfide
1Heterostructures
1High-resolution methods
1Homojunctions
1Immersion
1Indium phosphides
1Inorganic compounds
1Interfaces
1Interlayers
1Interstitials
1Lift off
1Low pressure
1Low temperature
1Luminescence
1Microelectronic fabrication
1Miller indices
1Mismatch lattice
1Multiple quantum well
1Nanodot
1Nanomaterial synthesis
1Nanostructured materials
1Nanostructures
1Nanowires
1Optical properties
1Optical reflection
1Optical transmission
1Photoluminescence
1Point defects
1Pseudomorphic growth
1Quantum dots
1Quantum wells
1Quaternary alloys
1Quaternary compounds
1Rapid thermal annealing
1Selective area
1Selective growth
1Silicon
1Simulation
1Stacking sequence
1Strain energy
1Temperature dependence
1Texture
1Threading dislocation
1Transmission electron microscopy
1Tunnel effect
1X-ray photoelectron spectra
1Zinc oxide

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