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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Cassette »
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List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000E36 (2002-09-01) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
000E86 (2002) Transistors Bipolaires à hétérojonction sur substrat GaAs : Résultats de fiabilité et circuits intégrés monolithiques : Croissance épitaxiale en phase vapeur aux organométalliques
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
001727 (1999) High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
002335 (1994) Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002A48 (1991) Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes
002B95 (1990) A new realisation of Schottky diodes on n-type Inp

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Gallium arsenides
5Ternary compound
4Binary compound
4Experimental study
4Gallium phosphide
4Heterojunction bipolar transistors
4Heterojunction transistor
4Indium phosphide
3Indium Phosphides
2Annealing
2Bipolar transistor
2Carbon addition
2Doping
2Gallium Arsenides
2Manufacturing process
2Microelectronic fabrication
2Monolithic integrated circuit
2Semiconductor device
2Thin film
2Voltage capacity curve
2X ray diffraction
1Barrier height
1Chemical vapor deposition
1DLTS
1Degradation
1Diode
1Electric breakdown of solids
1Electrical characteristic
1Electrical properties
1Electron traps
1Epitaxial film
1Epitaxy
1Equivalent circuit
1Experiments
1Gallium Indium Phosphides Mixed
1Gallium Phosphides
1Gallium compounds
1Heterojunction
1Hydrogenation
1III-V compound
1III-V semiconductors
1Indium compounds
1Interface
1Interface states
1Interface structure
1Low pressure
1Low temperature
1MIS structure
1MOCVD
1MOCVD coatings
1Microelectronics
1Microstructure
1Microwave device
1Microwave oscillator
1Microwave transistor
1Noise spectrum
1Organometallic compound
1Performance characteristic
1Power amplifier
1Power gain
1Power transistor
1Reliability
1Review
1Room temperature
1SIMS
1Schottky barrier diode
1Schottky contact
1Secondary ion mass spectrometry
1Semiconducting boron
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconductor doping
1Semiconductor epitaxial layers
1Semiconductor metal contact
1Sheet resistivity
1Silicon Oxides
1Space charge
1Superlattice
1Thin film device
1Transistor
1Transistor base
1Transmission electron microscopy
1Voltage controlled oscillator
1Voltage current curve
1n channel

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