S. Bouchel < S. Bouchoule < S. Bouchtalla

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000708 (2007)		Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000734 (2007)		1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000735 (2007)		1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000939 (2005)		Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
000A86 (2004)		Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000A87 (2004)		Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser
000B98 (2004)		1.55 μm VCSELs with InP/air-gap distributed bragg reflectors
000C18 (2003-08-18)		Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000F70 (2002)		Monolithic tunable InP-based vertical cavity surface emitting laser
001291 (2001)		(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001392 (2000)		Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator
001410 (2000)		Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001467 (2000)		Dense WDM (0.27/bit/s/Hz) 4×40 Gbit/s dispersion-managed transmission over 10 000 km with in-line optical regeneration by channel pairs
001491 (2000)		2×40 Gbit/s WDM optically regenerated dispersion-managed transmission over 10000 km with narrow channel spacing
001670 (1999)		Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001943 (1998)		Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001953 (1998)		Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001C10 (1997)		Self-consistent 1-D solution of multiquantum-well laser equations
001F45 (1996)		Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
001F64 (1996)		Chirp compensation in mode-locked DFB laser diodes with extended cavity

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List of associated KwdEn.i

Nombre de documents	Descripteur
9	Semiconductor lasers
8	Experimental study
7	Binary compounds
7	Indium phosphides
7	Theory
6	Semiconducting indium phosphide
5	Gallium arsenides
5	III-V semiconductors
5	Indium arsenides
4	Ambient temperature
4	Optical communication
4	Photoluminescence
4	Quantum well lasers
4	Vertical cavity laser
4	Wavelength division multiplexing
3	Communication channels (information theory)
3	Current density
3	Laser diodes
3	Laser materials
3	MOVPE method
3	Optical materials
3	Quaternary compounds
3	Semiconductor laser
3	Threshold current
2	CW lasers
2	Crystal growth from vapors
2	Experiments
2	External cavity
2	III-V compound
2	Injection laser
2	Laser pulses
2	Light modulators
2	Low pressure
2	Mach-Zehnder modulators
2	Metallorganic vapor phase epitaxy
2	Microelectronic fabrication
2	Mirrors
2	Molecular beam epitaxy
2	Multiple quantum well
2	Optical pumping
2	Optoelectronic device
2	Output power
2	Selective growth
2	Semiconducting gallium arsenide
2	Semiconductor growth
2	Semiconductor quantum wells
2	Surface emitting laser
2	Surface emitting lasers
2	Switching
2	Ternary compounds
1	Air gap
1	Annealing
1	Band structure
1	Binary compound
1	Bragg reflection
1	Buried laser
1	CVD
1	Cavity
1	Cavity resonator
1	Characterization
1	Chirp
1	Compensation
1	Congestion control (communication)
1	Continuous wave
1	Continuous wave lasers
1	Coupling factor
1	Crystal structure
1	Current voltage characteristics
1	Dense wavelength division multiplexing (DWDM)
1	Dense wavelength-division multiplexed (DWDM) channels
1	Dielectric materials
1	Dispersion-managed (DM) transmission
1	Distributed Bragg mirrors (DBR)
1	Distributed Bragg reflection
1	Distributed feedback laser
1	Doping
1	Doping (additives)
1	Electromagnetic dispersion
1	Emission spectrum
1	Epitaxial layers
1	Experimental device
1	Experimental result
1	Fabry Perot laser diodes
1	Fabry-Perot resonators
1	Feedback laser
1	Fiber optic networks
1	Gain
1	Gain measurement
1	Gain switching
1	Gallium Arsenides
1	Gallium nitrides
1	Gallium phosphides
1	Gas detectors
1	Homoepitaxy
1	Hydrides
1	In-line optical regeneration
1	Indium Gallium Arsenides Phosphides
1	Indium Gallium Arsenides phosphides Mixed
1	Indium Phosphides
1	Indium compounds

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