Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Bollaert »
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S. Bodnar < S. Bollaert < S. Bonnefont  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
000598 (2008) Ballistic nanodevices for high frequency applications
000720 (2007) Ballistic nano-devices for high frequency applications
000733 (2007) A 200-GHz true E-mode low-noise MHEMT
000748 (2006) Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000841 (2006) Dwell-time related saturation of phase coherence in ballistic quantum dots
000877 (2005) Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000989 (2005) Dwell-time-limited coherence in open quantum dots
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000A61 (2004) Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
000B38 (2004) InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate
000D34 (2003) Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate

List of associated KwdEn.i

Nombre de
documents
Descripteur
13High electron mobility transistors
8Gallium arsenides
7Experimental study
7Experiments
7Indium arsenides
7Transconductance
6III-V semiconductors
5Ballistic transport
5Molecular beam epitaxy
5Semiconducting indium gallium arsenide
5Substrates
4Aluminium arsenides
4Current density
4Heterojunctions
4High electron mobility transistor
4Semiconducting gallium arsenide
4Semiconductor device structures
4Theory
3Electron mobility
3Electron transport properties
3Heterostructures
3Indium aluminum arsenide
3Semiconducting indium compounds
2Ambient temperature
2Coherence
2Current voltage characteristics
2Dislocations (crystals)
2Field effect transistors
2GHz range
2Gain
2Gates (transistor)
2III-V compound
2Indium compounds
2Indium phosphide
2Monte Carlo methods
2Nanostructures
2Nanotechnology
2Quantum dots
2Room temperature
2Semiconductor device manufacture
2Semiconductor doping
2Semiconductor growth
2Ternary compound
2Ternary compounds
2Transferred substrate
2Two-dimensional electron gas
1Analog circuit
1Atomic force microscopy
1Background noise
1Band offset
1Barrier height
1Buffer layer
1Capacitance
1Composition effect
1Composition effects
1Concentration effect
1Coplanar technology
1Coplanar waveguides
1Current fluctuations
1Current gain
1Current mirrors
1Current rectifier
1Cut off frequency
1Cutoff frequency
1Delta doping plane
1Difference frequency
1Digital simulation
1Direct current
1Double heterojunction metamorphic high electron mobility transistors
1Drain current
1Drain to source current
1Dynamic characteristic
1Effective mass
1Electric breakdown
1Electric currents
1Electric potential
1Electric power measurement
1Electrical characteristic
1Electrical properties
1Electron beams
1Energy level population
1Enhancement mode
1Epilayers
1Epitaxy
1Equivalent circuits
1Extrinsic transconductance
1Fermi level
1Field effect transistor
1Frequencies
1Gallium Arsenides
1Gate current
1Gate length
1Gate voltage
1HEMT integrated circuits
1Heterojunction
1High frequency
1High voltage
1IV characteristic
1Indium
1Indium Arsenides

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