Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. W. Martin »
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R. W. Lee < R. W. Martin < R. W. Miles  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000109 (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000894 (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
000A17 (2005) Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure
001142 (2001) The dependence of the optical energies on InGaN composition
001175 (2001) Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Gallium nitrides
4Indium nitrides
3Quantum wells
3Semiconductor materials
3Ternary compounds
2Chemical composition
2Energy gap
2Experimental study
2Hexagonal lattices
2MOCVD
2Photoluminescence
2Thickness
1Aluminium nitrides
1Angular variation
1Binary compounds
1Cathodoluminescence
1Crystal morphology
1Dispersion relations
1EXAFS
1Edge dislocations
1Epitaxial layers
1Etching rate
1Excitation spectrum
1Growth mechanism
1Homoepitaxy
1III-V compound
1Indium compounds
1Indium nitride
1Inorganic compounds
1Layer thickness
1Line widths
1MOVPE method
1Material processing
1Microcavities
1Mismatch lattice
1Molecular beam epitaxy
1Operating conditions
1Phonon dispersion
1Phonon mode
1Phonons
1Photonic crystals
1Property composition relationship
1Quantum dots
1RBS
1Reactive ion etching
1Refractive index
1Stokes shift
1Thin films
1Threading dislocation
1VPE

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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