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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Schwedler »
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R. Schwarcz < R. Schwedler < R. Schwertberger  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001D89 (1996-06-15) Shallow strained InxGa1-xAs/InyGa1-yAs superlattices embedded in p-i-n diodes: Structural properties and optical response
002348 (1994) Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002614 (1993) Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses
002639 (1993) Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
002664 (1993) Growth and characterization of In0.53Ga0.47As/InxGa1-xAs strained-layer superlattices
002679 (1993) Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
4Indium arsenides
3Crystal growth
3Photoluminescence
3Semiconductor materials
3Superlattices
3Ternary compounds
2Electronic structure
2Energy-level transitions
2Epitaxy
2Gallium Indium Arsenides Mixed
2Indium Phosphides
2Indium phosphides
2Interface structure
2Theoretical study
2Thickness
1Absorption spectra
1Barrier height
1Binary compounds
1Chemical vapor deposition
1Crystal structure
1Diffusion equation
1Epitaxial film
1Excitons
1Interband transitions
1Interdiffusion
1Interface
1Lattice parameters
1Light dispersion
1Miniband
1Optical properties
1Optical spectrometry
1Optical transition
1Optoelectronic device
1Optoelectronic devices
1Organometallic compound
1Quantum well
1Quantum wells
1Strained quantum well
1TEM
1Thin films
1Transition energy
1Transmission electron microscopy
1Wafer
1XRD
1p i n junctions

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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