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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Pinchaux »
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R. Perez < R. Pinchaux < R. Piotrzkowski  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001561 (1999-06-15) Atomic structure of the As-rich InAs(100) β2(2×4) surface
001562 (1999-06-15) (1×2) Bi chain reconstruction on the InAs(110) surface
001770 (1999) Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation
001791 (1998-12-15) Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
001E22 (1996-03-15) Local aspects of the As-stabilized 2×3 reconstructed (001) surface of strained Inx Ga1-xAs alloys: A first-principles study
001E85 (1996) Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayers
001F97 (1995-11-06) Commensurate and incommensurate phases at reconstructed (In,Ga)As(001) surfaces: x-ray diffraction evidence for a composition lock-in
002174 (1995) Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface
002962 (1991) Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP : a valence-band contribution
002E05 (1988) Experimental determination of local-bonding configuration at the early stages of growth of the heterogeneous Pt/InP(110) interface by synchrotron-radiation spectroscopy

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
6Gallium arsenides
5Indium arsenides
5Surface reconstruction
4Semiconductor materials
3Indium compounds
3XRD
2Chemical bond
2III-V semiconductors
2Indium Phosphides
2Microstructure
2Semiconductor epitaxial layers
2Surface structure
2Ternary compounds
1Adsorbed layers
1Adsorption
1Atomic structure
1Binary compounds
1Bismuth
1Chemical composition
1Cleavage
1Commensurate-incommensurate transformations
1Covalent bond
1Coverage rate
1Dangling bond
1Density of states
1Electronic structure
1Emission spectrometry
1Energy gap
1Epitaxial layers
1Epitaxy
1Hydrogen
1III-V compound
1Incommensurate phases
1Indium phosphides
1Inorganic compound
1Inorganic compounds
1Interface
1Interface properties
1Interface structure
1Interfaces
1Metallic thin films
1Molecular beam epitaxy
1Photoelectron emission
1Photoelectron spectroscopy
1Segregation
1Solubility
1Stoichiometry
1Stresses
1Substrate
1Support
1Surface electron state
1Surface segregation
1Synchrotron radiation
1Theoretical study
1Thin film
1Thin films
1Transition metal
1Ultraviolet radiation
1Valence band
1X-ray scattering

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "R. Pinchaux" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "R. Pinchaux" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |clé=    R. Pinchaux
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