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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Kudrawiec »
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R. Krais < R. Kudrawiec < R. Kumar  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000C25 (2003-08-15) Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
7III-V semiconductors
6Gallium arsenides
6Photoreflectance
5Experimental study
4Quaternary compounds
3Electronic structure
3Indium arsenides
3Indium compounds
3Photoluminescence
2Binary compounds
2Conduction bands
2Energy gap
2Gallium compounds
2Gallium nitrides
2Gallium phosphides
2Ground states
2Indium nitrides
2Indium phosphides
2Quantum dot lasers
2Quantum wells
2Semiconductor epitaxial layers
2Semiconductor materials
2Semiconductor quantum wells
2Temperature dependence
2Ternary compounds
1Annealing
1Arsenic Nitrides
1Band offset
1Band theory
1Blue shift
1Chemical composition
1Crystal defects
1Defect characterization
1Defect level
1Defect recombination
1Effective mass
1Effective mass model
1Energy levels
1Excited states
1GSMBE method
1Gallium Arsenides Antimonides Nitrides
1Gallium Arsenides Nitrides
1Gallium Indium Arsenides Nitrides
1Interface states
1Kramers Kronig analysis
1Level crossing
1Localized states
1Luminescence spectrometry
1Matrix elements
1Modulation spectra
1Modulation spectroscopy
1Molecular beam epitaxy
1Nanostructured materials
1Nitrogen
1Optical materials
1Optical properties
1Optical transition
1Quantum dots
1Rapid thermal annealing
1Reflection spectrum
1Reflectivity
1Resonant states
1Semiconductor lasers
1Thermal annealing
1Transmission electron microscopy
1Ultrathin films
1Valence bands
1Wetting
1XRD

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