Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. J. Simes »
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R. J. Potter < R. J. Simes < R. J. Warburton  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
002073 (1995-02-15) Energy gaps in strained In1-xGaxAs/In1-yGayAszP1-z quantum wells grown on (001) InP
002606 (1993) Observation by electroabsorption of strain-enhanced interface roughening in GaxIn1-xAs/Ga0.22In0.78As0.48P0.52 quantum wells prepared by gas-source molecular beam epitaxy
002797 (1992) Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers

List of associated KwdEn.i

Nombre de
documents
Descripteur
2Experimental study
2Gallium Indium Arsenides Mixed
2Gallium Indium Arsenides phosphides Mixed
2Quantum wells
2Quaternary compounds
2Semiconductor laser
2Strained quantum well
1Absorption spectra
1Arsenides
1Arsenides phosphides
1Current density
1Dispersion
1Electric field effects
1Electro-optical effects
1Energy gap
1Excitons
1Experimental result
1Gallium arsenides
1Gallium compounds
1Gallium phosphides
1Indium arsenides
1Indium compounds
1Indium phosphides
1Interface phenomena
1Internal strains
1Line widths
1Luminescence
1Phosphides
1Photoconductivity
1Photoluminescence
1Roughness
1Semiconductor materials
1Stokes shift
1Stresses
1Tensile stress
1Ternary compounds
1Thickness

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