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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. J. Nicholas »
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R. J. Luyken < R. J. Nicholas < R. J. Potter  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000846 (2006) Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
000B59 (2004) Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
000C02 (2003-12-15) Insulating states of a broken-gap two-dimensional electron-hole system
001263 (2001) Edge effects in an insulating state of an electron-hole system in magnetic field
001278 (2001) Breakdown of the quantum Hall effect in an electron-hole system
001317 (2000-09-11) Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System
001829 (1998-09-15) Magnetic breakdown in the semimetallic InAs/GaSb system
001C70 (1997) Growth of InAs/GaSb strained layer superlattices by MOVPE. III. Use of UV absorption to monitor alkyl stability in the reactor
001E09 (1996-04-15) Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
002C46 (1989) Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions
003025 (1986) First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands
003048 (1986) A study of n-type GaxInl-xAsyPl-y-InP quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
5Gallium antimonides
5Indium arsenides
5Quantum Hall effect
5Semiconductor materials
4Electron hole pair
3Binary compounds
3Gallium compounds
3Indium compounds
3Landau levels
2Activation energy
2Carrier density
2Charge carrier concentration
2Cyclotron resonance
2Effective mass
2Energy gap
2Heterojunction
2III-V semiconductors
2Indium Phosphides
2Interface states
2Magnetic field effects
2Magnetoresistance
2Two-dimensional electron gas
1Antimony compounds
1Arsenic compounds
1Atmospheric pressure
1Atomic force microscopy
1Charge carrier mobility
1Charge carriers
1Complex defect
1Conduction bands
1Critical current density
1Critical field
1Crystal growth from vapors
1Donor center
1Edge effect
1Epitaxial layers
1Fermi level
1Fermi surface
1Fluctuations
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides Mixed
1Hall effect
1Heterostructures
1High field
1Hole density
1Hybridization
1Inorganic compound
1Interband transitions
1Level anticrossing
1MOVPE method
1Magnetic breakdown
1Magnetic fields
1Magnetophonon effect
1Metal-insulator transition
1Modelling
1Multiple quantum well
1Photoconductivity
1Precursor
1Pressure
1Process control
1Raman scattering
1Roughness
1Semiconductor heterojunctions
1Semiconductor superlattices
1Shubnikov de Haas effect
1Shubnikov-de Haas effect
1Stability
1Stresses
1Superlattices
1Temperature
1Temperature dependence
1Thickness
1Thin films
1Two dimensional system
1Two-dimensional systems
1Ultraviolet absorption
1two-dimensional hole gas

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "R. J. Nicholas" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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