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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Coquille »
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R. Cook < R. Coquille < R. Coratger  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001F41 (1996) Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system
001F87 (1995-12-01) Numerical analysis of photorefractive InP:Fe at large fringe contrast
002795 (1992) Transmission electron microscopy in situ investigation of dislocation mobilities in InP
002978 (1991) Spatial investigation of an iron-doped indium phosphide ingot
002A14 (1991) Inhomogeneity in a semi-insulating indium phosphide ingot
002A15 (1991) Incremental creep testing : application to the plasticity of InP between 0.31 and 0.77 Tm
002B08 (1990) Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B87 (1990) Characterisation of semi-insulating InP:Fe
002B90 (1990) Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements
002E61 (1987) X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals
002E68 (1987) Thermal activation of glide in InP single crystals
002E69 (1987) Thermal activation of deformation in S-doped InP single crystals
002E94 (1987) Properties of InP doped with Led ions
002F00 (1987) Observation of cellular structures of defects in semi-insulating InP-Fe
002F16 (1987) Heat treatment effect on p type Zn doped InP substrates
002F96 (1986) Residual sulphur and silicon doping in InP and GaInAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Experimental study
12Indium Phosphides
11Inorganic compound
7Semiconductor materials
6Impurity
5Iron
5Single crystal
4Czochralski method
4Doping
4Transmission electron microscopy
3Dislocation
3High temperature
3Liquid encapsulation
3Photoluminescence
3Plasticity
3Secondary ion mass spectrometry
3Temperature
2Characterization
2Charge carrier concentration
2Compression
2Crystal defect
2Crystal growth
2Electron paramagnetic resonance
2Growth from liquid
2Impurity density
2Plastic deformation
2Stress relaxation
2Sulfur
2Uniaxial stress
1Aluminium Antimonides
1Annealing
1Charge carrier mobility
1Codoping
1Complex defect
1Compression test
1Creep
1Defect level
1Diffusion
1Dislocation forest
1Dislocation motion
1Electrical conductivity
1Electrical properties
1Electrons
1Epitaxy
1Extended defect
1Feasibility
1Finite difference method
1Gain
1Gallium
1Gallium Antimonides
1Gallium Indium Arsenides Mixed
1Gratings
1Hall effect
1Hardening
1Heat treatment
1Heterogeneity
1High pressure
1High resolution
1III-V compound
1Indium Arsenides
1Indium phosphides
1Iron additions
1Minority carrier
1Molecular beam condensation
1Molybdenum
1Niobium
1Optical mixing
1Palladium
1Photoelectronic properties
1Photomultiplier
1Photorefractive effect
1Point defect cluster
1Predeformation
1Quaternary compound
1Resonance
1Rhodium
1Ruthenium
1Scanning mode
1Screw dislocation
1Silicon
1Size effect
1Solar cell
1Solid state
1Space charges
1Stairway
1Strain rate
1Stress strain relation
1Ternary compound
1Theoretical study
1Thermal stability
1Thin film
1Timing properties
1Tomography
1X ray topography
1Zinc

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