IndiumV3, France, Analysis, indexItem, Author.i, R. Carles

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List of bibliographic references

Number of relevant bibliographic references: 12.

Ident.	Authors (with country if any)	Title
001495 (1999-12-15)		Strain distribution and optical phonons in InAs/InP self-assembled quantum dots
001605 (1999-01-04)		Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
001891 (1998-01-26)		Alloying effects on the critical layer thickness in InxGa1-xAs/InP heterostructures analyzed by Raman scattering
001B02 (1997-07-15)		Tensile and compressive strain relief in InxGa1-xAs epilayers grown on InP probed by Raman scattering
001C00 (1997)		Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE
001C07 (1997)		Spatially resolved optical of spectroscopy of GaAs islands on InAs (111)
001D70 (1996-08-12)		Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy
001E72 (1996)		Structural aspects of the growth of InAs islands on InP substrate
002701 (1993)		Dynamical properties of Ga1-x Inx as solid solutions : influence of local distortion effects
002F98 (1986)		Raman investigation of the InP lattice dynamics
003041 (1986)		Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry
003097 (1984)		Selectivity of resonant Raman scattering in InAsxP1-x solid solutions

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Experimental study
5	III-V semiconductors
4	Indium compounds
4	Raman spectra
3	Gallium arsenides
3	Inorganic compound
2	Epitaxy
2	Indium Phosphides
2	Molecular beam epitaxy
2	Raman scattering
2	Raman spectroscopy
2	Semiconductor epitaxial layers
2	Semiconductor quantum dots
2	Stress relaxation
1	Amorphization
1	Atomic force microscopy
1	Binary compounds
1	Chemical composition
1	Compressibility
1	Dynamic properties
1	Effective mass
1	Elastic relaxation mechanism
1	Electron phonon interaction
1	Electron transitions
1	Energy gap
1	Epitaxial layers
1	Experimental result
1	Experiments
1	Gallium Arsenides
1	Gallium Indium Arsenides Mixed
1	Growth from vapor
1	Heterojunction
1	Heterostructures
1	III-V compound
1	Indium Arsenides
1	Indium Arsenides phosphides
1	Indium arsenide
1	Indium arsenides
1	Interface phonons
1	Internal stresses
1	Ion implantation
1	Island density
1	Island spatial distribution
1	Island structure
1	Lattice dynamics
1	MOVPE method
1	Mathematical models
1	Modulation spectroscopy
1	Monolayers
1	Morphology
1	Organometallic compound
1	Phonon density of states
1	Phonon spectra
1	Phonons
1	Photoluminescence
1	Piezoelectricity
1	Polarization
1	Raman spectrometry
1	Raman spectrum
1	Recrystallization
1	Reflection high energy electron diffraction
1	Relaxation processes
1	Semiconducting indium compounds
1	Semiconducting indium phosphide
1	Semiconductor growth
1	Semiconductor heterojunctions
1	Semiconductor materials
1	Size effect
1	Solid solution
1	Spectrometry
1	Stransky-Krastanov growth mode
1	Structural analysis
1	Structural aspects
1	Substrates
1	Surface analysis
1	Surface states
1	Theoretical study
1	Theory
1	Thermal annealing
1	Transmission electron microscopy
1	Zinc Atomic ions
1	self-assembly

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « R. Carles »