Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Cadoret »
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R. Cadic < R. Cadoret < R. Calemczuk  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001738 (1999) Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE
001982 (1998) Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy
001E37 (1996-01) Epitaxie sélective confinée d'InP sur substrat Si et dopage silicium de couches InP par la méthode aux hydrures
002161 (1995) Kinetic expression and study of the growth rate of mismatched (Ga,In)/As/InP structures grown by hydride vapour phase epitaxy
002255 (1994-09) Hétéroépitaxie de structures contraintes GaxIn1-xAs/InP et de couches InP à faible taux de défauts sur Si par la méthode aux hydrures
002414 (1994) Epitaxial growth and kinetic study of mismatched (Ga,In)As/InP layers grown by hydride vapour phase epitaxy
002583 (1993) Photoluminescence studies in strained InAs/InP quantum wells grown by hybride vapour-phase epitaxy
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy
002A36 (1991) Experimental and theoretical study of InP homoepitaxy by chemical vapour deposition from gaseous indium chloride and hydrogen diluted phosphine
002B40 (1990) Kinetic processes in epitaxy of GaxIn1-xAs on InP(100) by hydride vapour phase epitaxy
002B65 (1990) Epitaxial growth of InP/InAs/InP quantum wells
002C24 (1989) Analyse des conditions de croissance de GaxIn1-xAs/InP par la méthode aux hydrures
003043 (1986) Approach of the interplay between kinetics and diffusion in hot wall reactors used in V.P.E. of III-V compounds

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Experimental study
11Semiconductor materials
9Kinetics
7Crystal growth
6Epitaxy
6Indium phosphides
6Inorganic compound
5Hydrides
5Indium Phosphides
5Indium arsenides
5VPE
4Binary compounds
4Heterojunctions
4Photoluminescence
4Ternary compounds
4Thin film
3Crystal growth from vapors
3Gallium arsenides
3Growth from vapor
3Theoretical study
2Chemical vapor deposition
2Doping
2Epitaxial layers
2Gallium Indium Arsenides Mixed
2Heteroepitaxy
2Heterojunction
2Homoepitaxy
2Indium Arsenides
2Lateral growth
2Mismatch lattice
2Preparation
2Quantum wells
2Selective growth
2Silicon additions
2Strained quantum well
2Stresses
2Thickness
2Thin films
1Arsenides phosphides
1Band offset
1Band structure
1Buffer layer
1Characterization
1Chemical composition
1Confinement
1Controlled atmosphere
1Dislocation density
1Effective mass
1Energy-level transitions
1Excitons
1Gallium Arsenides
1Gallium Indium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Growth mechanism
1HVPE
1High resolution
1III-V compound
1Impurity density
1Interface
1Laser beam
1Lattice relaxation
1Mass transfer
1Multiple layer
1Multiple quantum well
1Optical microscopy
1Optical transition
1Partial pressure
1Precursor
1Quantum well
1Recombination
1Roughness
1SIMS
1Silicon
1Solid solid interface
1Solid solution
1Solid-solid interfaces
1Strained layer
1Supersaturation
1Temperature
1Temperature dependence
1Temperature range 0-13 K
1Temperature range 13-65 K
1Temperature range 65-273 K
1Thick films
1Transmission electron microscopy

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