Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Blanchet »
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R. Bisaro < R. Blanchet < R. Blondeau  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001F73 (1996) Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
002945 (1991) Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP
002B00 (1990) The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements
002D59 (1988) Photoluminescence enhancement of InP treated with activated hydrogen
002E46 (1987) Passivation de la surface de phosphure d'indium par des éléments de la colonne V
002F27 (1987) Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures
003027 (1986) Electronical properties of metal-insulator-semiconductor devices prepared on thermally treated InP in Phosphorus overpressure

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Indium Phosphides
5MIS structure
4Experimental study
4Semiconductor materials
3Microelectronic fabrication
3Passivation
3Photoluminescence
3Voltage capacity curve
2Arsenic
2Fermi level
2Field effect transistor
2Inorganic compound
2Surface treatment
1Aluminium Oxides
1Aluminium arsenides
1Binding energy
1Capacitance
1Charge carrier trapping
1Chemical bond
1Compressive stress
1Controlled atmosphere
1Crystal defect
1Crystal defects
1Crystal face
1Dangling bond
1Density of states
1Deposition
1Doping
1Electrical conductivity
1Electrical insulation
1Electrical properties
1Electron bombardment evaporation
1Epitaxial layers
1Epitaxy
1Frequency
1Gallium arsenides
1Heat treatment
1High resolution
1Hydrogen
1III-V semiconductors
1Improvement
1Indium arsenides
1Interface
1Interface electron state
1Metal grid
1Molecular beam
1Molecular beam epitaxy
1N type conductivity
1Oxidation
1Oxidation number
1Phosphorus
1Photoelectron spectrometry
1Preparation
1Processing control
1Protection grid
1Reflection high energy electron diffraction
1Relaxation
1Scanning mode
1Single crystal
1Solid solid interface
1Solid state device
1Strained superlattice
1Substrate
1Tensile stress
1Ternary compounds
1Thin films
1Voltage current curve

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