Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « R. Azoulay »
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R. Averbeck < R. Azoulay < R. B. Heppenstall  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001E68 (1996) Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
002218 (1995) 8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002600 (1993) Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity
002989 (1991) Performance characteristics of strained layer InGaAs/GaAs broad area and ridge waveguide lasers
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A47 (1991) Electrical and structural characterization of GaAs on InP grown by OMCVD ; application to GaAs MESFETs
002B32 (1990) Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
003107 (1984) Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Gallium Arsenides
5Experimental study
5Indium Phosphides
3Inorganic compound
3Photoluminescence
3Scanning electron microscopy
3Semiconductor materials
2Aluminium Gallium Arsenides Mixed
2Chemical vapor deposition
2Crystal growth
2Gallium Indium Arsenides Mixed
2Gallium Indium Arsenides phosphides Mixed
2Optical bistability
2Organometallic compound
2Quantum wire
2Strained quantum well
1All optical circuit
1Bandwidth
1Binary compound
1Binary compounds
1Bistability threshold
1Bistable
1Characterization
1Charge carrier recombination
1Circuit design
1Confinement
1Crystal growth from vapors
1Current gain
1Current-optical power characteristic
1Doping
1Electrical characteristic
1Epitaxial layers
1Epitaxy
1Experiments
1Field effect transistor
1Frequency characteristic
1Heterojunction
1Homoepitaxy
1Hydrides
1III-V compound
1Indium Gallium Arsenides Mixed
1Indium phosphides
1Injection laser
1Integrated optoelectronics
1Iron additions
1Lifetime
1Low pressure
1Low temperature
1Luminescence decay
1Manufacturing
1Manufacturing process
1Metal semiconductor field effect transistor
1Microelectronic fabrication
1Monolithic integrated circuit
1Multiple quantum well
1Non linear optics
1Nonlinear optics
1Optical microcavity
1Optical switches
1Optical transmission
1Optoelectronic device
1Performance
1Preparation
1Ridge waveguide
1SIMS
1Selective growth
1Semiconducting gallium arsenide
1Semiconducting indium phosphide
1Semiconductor device structures
1Semiconductor growth
1Semiconductor laser
1Spectral line shift
1Submilliwatt optical bistability
1Surface emitting laser
1Temperature dependence
1Temperature effect
1Thickness
1Thin film
1Transfer characteristic
1Transmitter
1VPE
1Vertical cavity laser
1Voltage current curve
1Wafer fused vertical cavity
1Waveguide laser
1XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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