Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Soukiassian »
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P. Sondhauss < P. Soukiassian < P. Staib  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000346 (2010) Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
000500 (2008) Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
001407 (2000) Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001535 (1999-09-15) Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
001D16 (1997) A study of InP(100) surface passivation by antimony deposition
001E81 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
002143 (1995) Na/InAs(110) interface formation at RT
002273 (1994-07) Cs-induced highest EF jump above InAs(110) conduction-band minimum
002311 (1994-02-14) Sb-induced interatomic bond distance stabilization on InP(100) surface
002357 (1994) Sodium or cesium-assisted nitrogen monoxide reaction win InP(110) at ambient temperature
002368 (1994) Photoemission extended X-ray absorption fine structure (PEXAFS): a new approach to probe surface and interface atomic geometry
002404 (1994) Giant band bending and interface formation of Cs/InAs(110) zt room temperature
002444 (1994) Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum
002564 (1993) Sb-induced surface stabilization of InP(100) wafer beyond 500°C
002575 (1993) Polarization-dependent photoemission EXAFS investigation of the InP(110) surface structure
002817 (1992) Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature
002B88 (1990) Catalytic nitridation of a III-V semiconductor using alkali metal

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Experimental study
8Semiconductor materials
7Adsorption
7Indium arsenides
6Cesium
6Photoelectron spectroscopy
5Fermi level
5Synchrotron radiation
4Antimony
4Indium phosphides
4Photoemission
4Surface states
4Surface structure
3III-V semiconductors
3Indium Phosphides
3Solid-solid interfaces
2Adsorption site
2Band bending
2Binary compounds
2EXAFS
2Indium antimonides
2Inorganic compounds
2Interface structure
2LPE
2Pinning
2Quantum dots
2Scanning electron microscopy
2Sodium
2Surface
2Surface reconstruction
2Surface treatments
1Absorption
1Accumulation layers
1Adsorption structure
1Alkali metal
1Ambient temperature
1Antimony additions
1Atomic force microscopy
1Atomic structure
1Band structure
1Binary alloy
1Bond length
1Bond lengths
1Clean surface
1Coatings
1Conduction bands
1Core levels
1Coverage rate
1Crystal face
1Curve fitting
1Density functional method
1Deposition
1Dimensions
1Dispersive spectrometry
1Donors
1EXAFS spectrometry
1Effective mass
1Electron gas
1Electronic structure
1Film growth
1Fine structure
1Gallium Arsenides
1Gas solid interface
1Growth mechanism
1Indium Antimonides arsenides
1Indium Arsenides phosphides
1Indium Phosphorus
1Indium compounds
1Indium phosphide
1Interface states
1Microstructure
1Mismatch lattice
1Modified material
1Monolayers
1Nitriding
1Nitrogen
1Nitrogen monoxide
1Nucleation
1Overlayers
1Passivation
1Phosphorus
1Photoelectron spectra
1Photoelectron spectrometry
1Polarization
1Potassium
1Promoter
1Quaternary compounds
1Schottky barrier
1Self organization
1Self-assembled layers
1Self-assembly
1Silicon
1Spectral shift
1Stabilization
1Strains
1Surface diffusion
1Surface reaction
1Surface reactions
1Surfaces
1Temperature effects

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