P. Rudolf < P. Ruterana < P. Ruzakowski

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000157 (2011)		The high sensitivity of InN under rare earth ion implantation at medium range energy
000205 (2011)		Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
000289 (2010)		Optical properties of InN grown on Si(111) substrate
000302 (2010)		Investigation of InN layers grown by molecular beam epitaxy on GaN templates
000799 (2006)		Meta-GGA calculation of the electronic structure of group III-V nitrides
000807 (2006)		Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers
000824 (2006)		Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
000825 (2006)		Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
000832 (2006)		Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique
000866 (2005)		V-defects and dislocations in InGaN/GaN heterostructures
000909 (2005)		Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices
000964 (2005)		First-principles study of cubic AlxGa1-xN alloys
000985 (2005)		Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE
000A91 (2004)		Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
000B10 (2004)		Nanoscale EELS analysis of InGaN/GaN heterostructures
000D67 (2003)		First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys
000E60 (2002-06-01)		Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
000F37 (2002)		Quantitative measurement of In fluctuation inside MOCVD InGaN QWs
001246 (2001)		First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure
001559 (1999-06-15)		Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

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List of associated KwdEn.i

Nombre de documents	Descripteur
14	Indium nitrides
12	Gallium nitrides
10	Semiconductor materials
8	Transmission electron microscopy
7	Experimental study
7	Ternary compounds
6	APW calculations
6	Aluminium nitrides
6	Electronic structure
5	Band structure
5	Energy gap
5	Local density approximation
4	Heterostructures
4	Indium nitride
4	Inorganic compounds
4	Lattice parameters
4	Molecular beam epitaxy
4	Photoluminescence
4	Quantum wells
4	Wurtzite structure
3	Binary compounds
3	Buffer layer
3	Chemical composition
3	Dielectric function
3	Gallium compounds
3	Indium compounds
3	MOCVD
3	MOVPE method
3	Microstructure
3	Thickness
2	Crystallinity
2	Density functional method
2	Dislocations
2	Electron microscopy
2	Electronic density of states
2	Finite element method
2	Fluctuations
2	Generalized gradient approximation
2	Growth mechanism
2	III-V semiconductors
2	Optical properties
2	Semiconductor epitaxial layers
2	TEM
2	Thin films
2	Ultrathin films
2	VPE
2	Wide band gap semiconductors
2	XRD
1	Ab initio calculations
1	Aluminium Indium Nitrides Mixed
1	Aluminium compounds
1	Annealing
1	Atomic force microscopy
1	Atomic structure
1	Blende structure
1	CVD
1	Carrier density
1	Ceramics
1	Chalcopyrite
1	Chalcopyrite structure
1	Charge density
1	Chemical cleaning
1	Concentration distribution
1	Copper
1	Critical points
1	Crystal field splitting
1	Crystal growth from vapors
1	Crystal structure
1	Crystal symmetry
1	Cubic lattices
1	Damage
1	Defect
1	Defect structure
1	Electron charge distribution
1	Electron diffraction
1	Electron energy loss spectra
1	Energy dispersive X-ray analysis
1	Epitaxial layers
1	Europium additions
1	Exchange interactions
1	Fabrication structure relation
1	Fluence
1	Gallium Arsenides
1	Gallium Indium Arsenides Mixed
1	Gallium Indium Nitrides Mixed
1	Gallium nitride
1	Ground states
1	Heterogeneous catalysis
1	High electron mobility transistors
1	Hydrostatic pressure
1	Indium
1	Infrared spectra
1	Inorganic compound
1	Interband transitions
1	Interface structure
1	Interfacial layer
1	Ion implantation
1	Ionicity
1	Island structure
1	Kramers Kronig analysis

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