Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Ossart »
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P. Ordejon < P. Ossart < P. P. Grand  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001B86 (1997) UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation
001E08 (1996-05) Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture
001F69 (1996) CBE growth of InGaAs(P) alloys using TDMAAs and TBP
002097 (1995) Gravure hélicon de l'InP en plasma HBr. Morphologie et caractérisation des défauts de surface
002643 (1993) Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
003013 (1986) Ion beam etching and surface characterization of indium phosphide

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
5Photoluminescence
4Indium Phosphides
4Indium phosphides
3Morphology
3Semiconductor materials
2AES
2Auger electron spectrometry
2Damage
2Epitaxy
2Etching
2Gallium Indium Arsenides Mixed
2Heterojunction
2Inorganic compound
2Microelectronic fabrication
2Organometallic compound
2SEM
2TEM
1Aluminium Gallium Arsenides Mixed
1Aluminium Indium Arsenides Mixed
1Atmospheric pressure
1Atomic force microscopy
1Auger effect
1Backscattering
1CBE
1CV characteristic
1CVD
1Characterization
1Chemical bonds
1Chemical diffusion
1Chemical vapor deposition
1Cleaning
1Comparative evaluations
1Concentration distribution
1Cooling
1Crystal growth
1Crystal growth from vapors
1Defects
1Deposition
1Double heterojunction
1ESR
1Electron beam lithography
1Electron microscopy
1Ellipsometry
1Engraving
1Field effect transistor
1Gallium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Gallium arsenides
1Gallium phosphides
1Growth from vapor
1Helicon waves
1Hydrobromic acid
1Hydrogen
1III-V semiconductors
1Indium arsenides
1Indium compounds
1Infrared spectra
1Integrated circuit
1Ion beam etching
1Ion beams
1Ion implantation
1Liquid nitrogen
1MIS junctions
1Manufacturing
1Methane
1Multiple quantum well
1Nitrogen additions
1Optoelectronic device
1Order disorder
1Organic arsine
1Organic phosphine
1Oscillation modes
1Oxygen
1Passivation
1Photodiode
1Photodoping
1Plasma
1Precursor
1Quaternary compounds
1Raman scattering
1Rapid thermal annealing
1Roughness
1Sample holder
1Scanning electron microscopy
1Secondary ion mass spectra
1Silicon Nitrides
1Silicon oxides
1Spectral line shift
1Sputter etching
1Surface
1Surface analysis
1Surface structure
1Surface treatment
1Surfaces
1Ternary compounds
1Thermal annealing
1Thin film
1Thin films
1Ultraviolet radiation

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