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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. N. Favennec »
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P. N. Brunkov < P. N. Favennec < P. Nabarra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
002978 (1991) Spatial investigation of an iron-doped indium phosphide ingot
002A14 (1991) Inhomogeneity in a semi-insulating indium phosphide ingot
002B08 (1990) Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B90 (1990) Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements
002B93 (1990) Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples
002D47 (1988) Schottky and field-effect transistor fabrication on InP and GalnAs
002E07 (1988) Erbium implanted in III-V materials
002E26 (1988) Behaviour of erbium implanted in InP
002E98 (1987) Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As
002F00 (1987) Observation of cellular structures of defects in semi-insulating InP-Fe
002F01 (1987) Nondiffusion and 1•54 μm luminescence of erbium implanted in InP
002F18 (1987) Gold diffusion in InP
003041 (1986) Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry
003065 (1985) Shallow p+ layers in In0.53Ga0.47As by Hg implantation

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Indium Phosphides
8Experimental study
8Inorganic compound
7Impurity
6Ion implantation
6Photoluminescence
5Semiconductor materials
3Erbium
3Gallium Indium Arsenides Mixed
3Iron
2Acceptor center
2Amorphization
2Dislocation
2Gallium Arsenides
2Mercury
2Temperature
2Thermal annealing
1Aluminium Gallium Arsenides Mixed
1Angle
1Annealing
1Barrier height
1Chemical vapor deposition
1Compounded structure
1Crystal defect
1Crystal growth
1Czochralski method
1Deep level transient spectrometry
1Donor center
1Doping
1Energy gap
1Extended defect
1Field effect transistor
1Gallium Indium Arsenides phosphides Mixed
1Gold
1Heat treatment
1Heterogeneity
1High temperature
1III-V compound
1Impurity diffusion
1Impurity ionization
1Impurity level
1Ionization potential
1Junction
1Light emitting device
1Magnesium
1Measurement
1Metal semiconductor field effect transistor
1P+ n junction
1Point defect cluster
1Raman spectrum
1Recrystallization
1Scanning mode
1Secondary ion mass spectrometry
1Semiconductor device
1Shallow impurities
1Single crystal
1Substrate
1Surface treatment
1Thermodiffusion
1Thin film
1Time
1Tomography
1Wafer
1X ray
1Zinc Atomic ions

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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