Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Mounaix »
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P. Motte < P. Mounaix < P. Munsch  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000446 (2009) High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications
001356 (2000-01) Substrate transfer process for InP-based heterostructure barrier varactor devices
001370 (2000) Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz
001448 (2000) Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
001636 (1999) Transferred InP-based HBVs on glass substrate
001673 (1999) Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
001934 (1998) Step-like heterostructure barrier varactor
001972 (1998) Micromachining and mechanical properties of GaInAs/InP microcantilevers
001990 (1998) InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication
001999 (1998) High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
001A25 (1998) Capacitance engineering for InP-based heterostructure barrier varactor
001A43 (1998) 5-mw and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler
001F32 (1996) High performance InP-based heterostructure barrier varactors in single and stack configuration
002814 (1992) Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures
002A34 (1991) Fabrication of high-performance AlxGa1-xAs/InyGayAs/GaAs resonant tunneling diodes using a microwave-compatible technology

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Varactors
7Heterojunctions
5Capacitance
5Theory
4Experiments
4Gallium Arsenides
4Heterojunction
4Heterostructure barrier varactors
4Molecular beam epitaxy
4Semiconducting aluminum compounds
3Experimental study
3III-V compound
3Leakage currents
3Semiconducting indium compounds
3Semiconducting indium phosphide
3Semiconductor device manufacture
3Varactor diode
2Aluminium Arsenides
2Binary compound
2Capacitance measurement
2Current voltage characteristics
2Electric breakdown
2Gallium Indium Arsenides Mixed
2Indium Arsenides
2Indium phosphide
2Microelectronic fabrication
2Microwave
2Resonant tunnel effect
2Semiconducting gallium arsenide
2Semiconductor device structures
2Semiconductor quantum wells
2Substrates
2Ternary compound
2Voltage current curve
1Aluminium Gallium Arsenides Mixed
1Barrier tripler
1Barrier varactor triplers
1Bending test
1Cantilever
1Cantilever beam
1Capacitance voltage characteristics
1Capacitance-voltage (C-V) characteristics
1Carrier concentration
1Charge carrier trapping
1Chemical etching
1Coplanar line
1Double barrier varactor
1Dual heterostructure barrier varactors (DHBV)
1Eigenvalues and eigenfunctions
1Electric breakdown of solids
1Electrical characteristic
1Electron mobility
1Energy gap
1Epitaxial layer transfer method
1Excited states
1Fabrication
1Frequency
1Frequency band
1Frequency multiplier
1Gallium Indium Phosphides Mixed
1Gallium arsenides
1Gas source molecular beam epitaxy Riber (GSMBE) system
1Glass substrates
1Hardness test
1Harmonic multipliers
1Heavy ions
1Heterostructure barrier varactors (HBV)
1High performance
1Hole
1III-V semiconductors
1Impact ionization
1Indium Phosphides
1Indium arsenides
1Indium compounds
1Inorganic compound
1Integrated circuit
1Ion irradiation
1Layer complexity
1Leakage current
1Lift off
1Manufacturing process
1Many-valley semiconductors
1Mechanical properties
1Micromachining
1Microwave circuit
1Microwave device
1Millimeter wave devices
1Millimeter waves
1Miniaturization
1Negative differential conductivity
1Output power
1Performance
1Performance evaluation
1Photoresists
1Planar technology
1Poisson distribution
1Potential barrier
1Precision engineering
1Probe
1Production process

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