List of bibliographic references
Number of relevant bibliographic references: 31.
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20-30][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 002567 (1993) |
| Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE |
| 002642 (1993) |
| Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers |
| 002659 (1993) |
| High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine |
| 002911 (1992) |
| Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy |
| 002973 (1991) |
| Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source |
| 002A03 (1991) |
| Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P |
| 002A04 (1991) |
| Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures |
| 002A06 (1991) |
| MOMBE growth of high quality GaAs/GaInP heterostructures |
| 002A10 (1991) |
| Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xP |
| 002A29 (1991) |
| Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors |
| 002A65 (1991) |
| Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties |
| 002B01 (1990) |
| The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD |
| 002B35 (1990) |
| MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers |
| 002B55 (1990) |
| High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition |
| 002C11 (1989) |
| Première observation d'une résistance différentielle négative dans un système à double barrière InP/Ga0,47In0,53As |
| 002C19 (1989) |
| Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD |
| 002C20 (1989) |
| Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD |
| 002C21 (1989) |
| Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques |
| 002D26 (1988) |
| Very high purity InP epilayer grown by metalorganic chemical vapor deposition |
| 002D90 (1988) |
| High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates |
| 002D91 (1988) |
| High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition |
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