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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Launay »
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P. Laruelle < P. Launay < P. Lavela  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001A26 (1998) CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001C22 (1997) Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001C55 (1997) InP/InGaAs double-HBT technology for high bit-rate communication circuits
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
001D07 (1997) Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D40 (1996-11) High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
002148 (1995) Modern epitaxial techniques for HBT structures
002409 (1994) First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
002753 (1993) 'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
5Annealing
5Gallium arsenides
5Heterojunction transistor
4Diffusion
4Epitaxial layers
4Gallium Arsenides
4Heterojunction bipolar transistors
4III-V compound
4Indium arsenides
4Semiconductor materials
4Ternary compounds
3Beryllium additions
3Binary compound
3Bipolar transistor
3Doped materials
3Doping
3Indium Phosphides
3Semiconducting gallium arsenide
3Thin films
2Carbon addition
2Chemical beam condensation
2Chemical beam epitaxy
2Diffusion profile
2Epitaxy
2Experiments
2III-V semiconductors
2Leakage currents
2Ohmic contacts
2Point defects
2SIMS
2Semiconducting indium phosphide
2Semiconductor device manufacture
2Ternary compound
2Theoretical study
1Application
1Bandwidth
1Beryllium
1Binary compounds
1Bipolar transistors
1Bromides
1CBE
1Carbon additions
1Charge carrier concentration
1Chemical interdiffusion
1Collector current density
1Concentration distribution
1Contact resistance
1Crystal defects
1Current density
1Cuttoff frequencies
1Depth profiles
1Dielectric film deposition
1Diffusivity
1Digital integrated circuits
1Doping profiles
1Dry etching
1Electrical characteristic
1Emitter collector voltage
1Epitaxial transistor
1Fabrication property relation
1Gain
1Gallium Indium Phosphides Mixed
1Gallium Phosphides
1Gallium phosphides
1Hall effect
1Heat treatments
1High bit rate communication circuits
1High speed optoelectronic technology
1Indium Arsenides
1Indium compounds
1Indium phosphides
1Inorganic compounds
1Integrated circuit manufacture
1Integrated optoelectronics
1Light modulators
1Measuring methods
1Metallizing
1Microelectronic fabrication
1Microelectronic processing
1Microwave device
1Modeling
1Molecular beam condensation
1Multiplexing equipment
1Optical communication
1Optical links
1Optoelectronic devices
1Performance characteristic
1Photoluminescence
1Platinum
1Precipitation
1Production process
1Raman spectra
1Reviews
1Semiconducting indium compounds
1Semiconductor device
1Semiconductor device metallizing
1Semiconductor device structures
1Semiconductor junctions
1Stability

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