Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Krauz »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
P. Krautz < P. Krauz < P. Krejcik  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002210 (1995) An optical study of interdiffusion in strained InP-based heterostructures
002375 (1994) Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002971 (1991) Temperature influence on the damage induced in Si+-implanted InP
002A17 (1991) In situ thermal annealing of InP amorphous layer induced by Si+ implantation
002A22 (1991) High resolution electron microscopy study of damage created in Si-implanted InP
002B50 (1990) In situ defect studies on Si+ implanted InP
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002F42 (1987) Defect-induced compensation in the bulk of implanted indium phosphide
002F90 (1986) Solid phase epitaxial regrowth of ion-implanted amorphized InP
003044 (1986) Anneal behavior of Zn acceptor implanted In0.53Ga0.47As layers: a study of carrier distributions

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Ion implantation
7Experimental study
6Indium Phosphides
6Semiconductor materials
5Inorganic compound
4Annealing
4Thermal annealing
3Amorphization
3Charge carrier concentration
3Photoluminescence
3Silicon
2Aluminium Indium Arsenides Mixed
2Amorphous state
2Compensation
2Concentration distribution
2Defect
2Electrical conductivity
2Gallium Indium Arsenides Mixed
2Integrated optoelectronics
2Multiple quantum well
2Recrystallization
2Temperature
2Transmission electron microscopy
2Zinc
1Advanced technology
1Arsenic
1Arsenic Atomic ions
1Atomic cluster
1Auger electron spectrometry
1Chemical diffusion
1Chemical vapor deposition
1Codoping
1Crystal orientation
1Crystal twin
1Crystals
1Deep level
1Distributed feedback laser
1Distributed feedback lasers
1Donor center
1Doping
1Electric properties
1Electroabsorption modulator
1Electron microscopy
1Electrooptical modulator
1Epitaxy
1Excitons
1Experiments
1Fluence
1Gallium Arsenides
1Gallium arsenides
1Gallium phosphides
1High resolution
1Hole
1III-V compound
1III-V semiconductors
1Impurity
1Indium Arsenides
1Indium arsenides
1Indium phosphides
1Industrial application
1Interdiffusion
1Lattice distortion
1Light absorption
1Light modulators
1Light sources
1Manufacturing process
1Monolithic integrated circuit
1Monolithic integrated circuits
1Optical materials
1Optical properties
1Optical telecommunication
1Optoelectronics
1Order disorder
1Oxygen
1Phosphorus Arsenides
1Photonic band
1Plasma enhanced chemical vapor deposition
1Polaron
1Precipitate
1Quantum wells
1Quaternary compound
1Quaternary compounds
1Rapid thermal annealing
1Running
1Semiconducting indium compounds
1Semiconductor laser
1Semiconductor quantum wells
1Spectral line shift
1Spectral shift
1Ternary compound
1Thin film
1Twinning

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "P. Krauz" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "P. Krauz" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. Krauz
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024