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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Krapf »
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P. Kossacki < P. Krapf < P. Krautz  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001933 (1998) Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)
001A72 (1997-10-15) Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001)
001B35 (1997-04-15) Role of the step curvature in the stabilization of coherently strained epitaxial structures
001C50 (1997) Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP
001E80 (1996) Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP
002203 (1995) Connection of a scanning tunneling microscope with a molecular beam epitaxy chamber and analysis of the vibration isolation system

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5Gallium arsenides
4Indium arsenides
4Molecular beam epitaxy
4STM
4Surface structure
4Ternary compounds
3Crystal growth
2Epitaxial layers
2III-V semiconductors
2Indium compounds
2Semiconductor materials
1Arsenic compounds
1Chemical composition
1Compressive stress
1Crystal growth from vapors
1Elastic deformation
1Gallium compounds
1Heterojunctions
1Indium phosphides
1Instrumentation
1Insulation
1Interface states
1Interface structure
1Island structure
1Mechanical vibrations
1Morphology
1RHEED
1Scanning probe microscopy
1Semiconductor epitaxial layers
1Semiconductor growth
1Solid solutions
1Step
1Strains
1Stress relaxation
1Stresses
1Surface energy
1Surface phase transformations
1Surface reconstruction
1Tensile stress
1Theoretical study
1Three-dimensional systems
1Two-dimensional systems
1Ultrahigh vacuum

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