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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Gibart »
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P. Georges < P. Gibart < P. Gilet  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000495 (2008) Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000672 (2007) Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001146 (2001) Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs
001176 (2001) Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
001446 (2000) Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
001522 (1999-10-25) Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
001701 (1999) Metal organic vapour phase epitaxy of GaN and lateral overgrowth
002257 (1994-09) Dopage N dans (Al, Ga)As: Limitations et perspectives

List of associated KwdEn.i

Nombre de
documents		Descripteur
5MOVPE method
4Gallium nitride
4III-V semiconductors
3Binary compound
3Experimental study
3Light emitting diode
3Ternary compound
3VPE
2Bias voltage
2Carrier density
2Doping
2Gallium nitrides
2Gates
2Indium nitride
2Multiple quantum well
2Nitrides
2Performance evaluation
2Photoluminescence
2Semiconductor materials
2Silicon additions
2Template reaction
2Ternary compounds
2Two-dimensional electron gas
1Absorption spectra
1Aluminium arsenides
1Aluminium nitrides
1Binary compounds
1Cavity resonator
1Charge carrier density
1Charge carrier recombination
1Codoping
1Crystal doping
1Crystal growth from vapors
1Current voltage characteristics
1Defect states
1Dislocation density
1Dislocations (crystals)
1Distributed Bragg reflection
1Doped materials
1Electroluminescence
1Free carrier
1Gallium Nitrides
1Gallium arsenides
1Gallium compounds
1Gallium indium nitride
1Gallium phosphides
1Green electroluminescent diodes
1Growth mechanism
1Heteroepitaxy
1High electron mobility transistor
1High electron mobility transistors
1III-V compound
1In situ
1Indium Nitrides
1Indium addition
1Indium additions
1Indium compounds
1Indium nitrides
1Indium phosphides
1Injection laser
1Interface
1Interfaces
1Iron
1Iron addition
1Lateral growth
1Leakage current
1Leakage currents
1Light emitting diodes
1MOCVD coatings
1Magnetoresistance
1Manufacturing process
1Microcavity
1Molecular beam epitaxy
1N-type conductors
1Optical characteristic
1Optimization
1Optoelectronic device
1Photoconductivity
1Power law
1Pressure effects
1Reflectometry
1Sapphire
1Semiconducting gallium compounds
1Semiconducting silicon
1Semiconductor epitaxial layers
1Semiconductor growth
1Silicon
1Substrates
1Temperature dependence
1Temperature effect
1Theory
1Thin films
1Tin additions
1Transport process
1Wide band gap semiconductors

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "P. Gibart" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "P. Gibart" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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