Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Disseix »
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P. Dimitriou < P. Disseix < P. Dluzewski  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000F53 (2002) Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
001138 (2001) Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001201 (2001) Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE
001283 (2001) Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy
001310 (2000-10-15) Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy
001516 (1999-11-15) Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region
001685 (1999) Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates
001919 (1998) The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers
001A17 (1998) Effect of indium surface segregation on excitonic properties in (111)B-grown (In, Ga)As/GaAs multiple quantum wells
001A48 (1997-12-15) Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells
001B50 (1997-01-15) Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
001C29 (1997) Optical investigation of piezoelectric field effects on excitonic properties in (111)N-grown (In, Ga)As/GaAs quantum wells
001C84 (1997) Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
001C94 (1997) Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
002583 (1993) Photoluminescence studies in strained InAs/InP quantum wells grown by hybride vapour-phase epitaxy
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
13Experimental study
8Binary compounds
8Quantum wells
8Semiconductor materials
7Ternary compounds
6Excitons
6Optical absorption
6Photoluminescence
5Gallium arsenides
5III-V semiconductors
5Molecular beam epitaxy
4Absorption spectra
4Excitonic process
4III-V compound
4Indium Arsenides
4Indium arsenides
4Indium compounds
4Semiconductor quantum wells
3Electroreflection
3Gallium Arsenides
3Gallium nitrides
3Indium nitrides
3Multiple quantum well
3Optical properties
3Oscillator strengths
3Photoreflectance
3Segregation
3Strained layer
2Band offset
2Electronic properties
2Electroreflectance
2Energy-level transitions
2Envelope function
2Epitaxial layers
2Epitaxy
2Indium phosphides
2Microelectronic fabrication
2Piezoelectricity
2Reflectivity
2Thickness
1Absorption coefficients
1Arsenic compounds
1Band structure
1Binary compound
1Chemical beam epitaxy
1Conduction bands
1Effective mass
1Electric field effects
1Energy gap
1Energy level
1Experimental data
1Fourier transform spectra
1Franz-Keldysh effect
1Gallium compounds
1Growth mechanism
1Growth rate
1Heterojunctions
1Heterostructures
1Impurity distribution
1Indium
1Indium Arsenides phosphides
1Indium Phosphides
1Inorganic compound
1Interface
1Interface states
1Laser beam
1Line broadening
1Line shape
1Line widths
1Measuring methods
1Modelling
1Optical density
1Optical spectroscopy parameter
1Optical transition
1Ordered systems
1Oscillator strength
1Piezoelectric device
1Piezoelectric semiconductors
1Preparation
1Quantum well
1Recombination
1Reflection spectrum
1Roughness
1Semiconductor epitaxial layers
1Semiconductor growth
1Strained quantum well
1Strained superlattice
1Stresses
1Surface segregation
1Temperature dependence
1Temperature effects
1Temperature range 0-13 K
1Temperature range 13-65 K
1Temperature range 65-273 K
1Ternary compound
1Theoretical study
1Thermal method
1Thermo-optical effects
1Time resolved spectra
1Valence bands

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