Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. De Mierry »
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P. De Faucal < P. De Mierry < P. De Padova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000126 (2012) Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000155 (2011) The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
000217 (2011) Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000A19 (2005) Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodes
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001176 (2001) Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
001326 (2000-08-01) Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation
001443 (2000) High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
001446 (2000) Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
001522 (1999-10-25) Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
001860 (1998-06-15) Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy
002159 (1995) Light-induced defects in plasma-hydrogenated InP:Zn

List of associated KwdEn.i

Nombre de
documents
Descripteur
7III-V semiconductors
6Experimental study
6Gallium nitride
6Photoluminescence
5Indium compounds
4Growth mechanism
3Gallium compounds
3III-V compound
3Indium nitride
3MOCVD
3Semiconductor epitaxial layers
3Ternary compounds
2Atomic force microscopy
2Doped materials
2Electroluminescence
2Light emitting diode
2MOCVD coatings
2MOVPE method
2Molecular beam epitaxy
2Sapphire
2Semiconductor growth
2Silicon additions
2Substrates
2Template reaction
2VPE
2Wide band gap semiconductors
1Absorption coefficients
1Absorption spectra
1Ammonia
1Application
1Binary compound
1Blue shift
1Bound exciton
1Carrier density
1Cavity resonator
1Chemical reactions
1Chemical vapor deposition
1Complex defect
1Confinement
1Crystal growth from vapors
1Crystal orientation
1Crystal structure
1Current voltage characteristics
1Dislocations (crystals)
1Distributed Bragg reflection
1Doping
1Electric field effects
1Energy gap
1Epitaxial layers
1Experimental result
1Experiments
1Gallium indium nitride
1Gallium nitrides
1Green electroluminescent diodes
1Growth rate
1Hydrogenation
1In situ
1Indium
1Indium dot
1Indium nitrides
1Indium phosphides
1Interlayers
1Laser diodes
1Lateral growth
1Light emitting diodes
1Line widths
1Manufacturing process
1Mechanical properties
1Microcavity
1Misfit dislocation
1Morphology
1Multilayer
1Multilayers
1Multiple quantum well
1Nanostructured materials
1Near ultraviolet spectral range
1Non radiative recombination
1Ohmic contacts
1Optical confinement
1Optimization
1Passivation
1Performance evaluation
1Photothermal effects
1Plasma assisted processing
1Polarity
1Power law
1Quantum dots
1Quantum wells
1Reactive ion etching
1Reflectometry
1Roughness
1Schottky barrier diodes
1Schottky barrier photodetectors
1Secondary ion mass spectrometry
1Semiconducting gallium arsenide
1Semiconducting gallium compounds
1Semiconducting silicon
1Semiconducting zinc compounds
1Semiconductor device structures
1Semiconductor doping

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