IndiumV3, France, Analysis, indexItem, Author.i, P. Crozat

P. Cremillieu < P. Crozat < P. D. Berger

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.

Ident.	Authors (with country if any)	Title
000735 (2007)		1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000B99 (2003-12-29)		Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
000C60 (2003-02-10)		Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
001943 (1998)		Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001D78 (1996-07-01)		Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
001F51 (1996)		Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview
002063 (1995-03-01)		Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors
002386 (1994)		Low temperature low voltage operation of HEMTs on InP
002400 (1994)		High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002563 (1993)		Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm
002667 (1993)		Gate length electric parameter dependences of ultra-submicrometre δ-doped pseudomorphic HEMTs
002714 (1993)		Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002819 (1992)		Picosecond large-signal switching characteristics of a pseudomorphic AIGaAs/InGaAs modulated doped field effect transistor

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Experimental study
7	High electron mobility transistor
5	Gallium Arsenides
4	Semiconductor device
3	Field effect transistor
3	Gallium Indium Arsenides Mixed
3	Gallium arsenides
3	III-V semiconductors
3	Indium Phosphides
2	Aluminium Arsenides
2	Aluminium Gallium Arsenides Mixed
2	Binary compound
2	Cryogenic temperature
2	Cut off frequency
2	Electrical characteristic
2	Indium Arsenides
2	Indium compounds
2	Ion beam effects
2	Low temperature
2	Performance characteristic
2	Planar doping
2	Semiconductor lasers
2	Size effect
2	Ternary compound
2	Transport process
1	Aluminium Gallium Arsenides
1	Aluminium Indium Arsenides Mixed
1	Amorphous state
1	Annealing
1	Binary compounds
1	Bragg reflection
1	Carrier concentration
1	Carrier lifetime
1	Carrier lifetimes
1	Carrier mobility
1	Current voltage characteristics
1	Defect states
1	Dielectric materials
1	Electrical properties
1	Electroluminescence
1	Electron mobility
1	Electrooptics
1	Emission spectra
1	Experiments
1	External cavity
1	Field effect transistors
1	Frenkel defects
1	Gain switching
1	Hall effect
1	III-V compound
1	Indium Gallium Arsenides
1	Indium arsenides
1	Indium phosphides
1	Injection current
1	Ion bombardment
1	Ion implantation
1	Large signal behavior
1	Laser materials
1	Laser modes
1	Laser pulses
1	Leakage current
1	Loss switching
1	Measurement
1	Microelectronic fabrication
1	Microwave device
1	Microwave transistor
1	Mirrors
1	Optical materials
1	Optical pulse generation
1	Optical pumping
1	Output power
1	Performance
1	Photoconducting devices
1	Photoconducting switches
1	Picosecond
1	Picosecond pulses
1	Production process
1	Proton effects
1	Pseudomorphic device
1	Radiative lifetimes
1	Radiofrequency
1	Recombination
1	Semiconducting gallium arsenide
1	Semiconducting indium gallium arsenide
1	Semiconducting indium phosphide
1	Semiconductor device models
1	Semiconductor epitaxial layers
1	Surface emitting lasers
1	Switching
1	Switching time
1	Temperature dependence
1	Ternary compounds
1	Theory
1	Thermal stability
1	Timing jitter
1	Transconductance
1	Transistor gate
1	Transition frequency
1	Transmission electron microscopy
1	Transverse mode

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   |clé=    P. Crozat
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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « P. Crozat »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « P. Crozat »