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Index « Auteurs » - entrée « P. Christol »
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P. Choi < P. Christol < P. Ciavarella  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000136 (2012) Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000246 (2011) Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
000295 (2010) Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method
000325 (2010) Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000475 (2009) A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000531 (2008) Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
000561 (2008) InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
000669 (2007) Interface analysis of InAs/GaSb superlattice grown by MBE
000867 (2005) Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
000917 (2005) Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral region
000935 (2005) MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
001209 (2001) MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001210 (2001) MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
001311 (2000-10-09) Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
001335 (2000-05-01) InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm
001435 (2000) InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Molecular beam epitaxy
8Indium arsenides
7Binary compounds
6Gallium antimonides
6III-V semiconductors
6Indium Arsenides
6Laser diodes
6Quantum well lasers
6Superlattices
5Current density
5Experimental study
5Photoluminescence
4Ambient temperature
4Mid infrared radiation
4Monolayers
4Semiconductor lasers
4Temperature dependence
3Crystal growth from vapors
3Superlattice
2Absorption coefficients
2Band structure
2Binary compound
2Electronic structure
2III-V compound
2Indium antimonides
2Indium compounds
2Infrared laser
2Infrared radiation
2Interfaces
2Nitrides
2Numerical method
2Optical gain
2Performance evaluation
2Photodiodes
2RHEED
2Theoretical study
2Threshold current
2Voltage measurement
11/f noise
1Absorbance
1Absorption coefficient
1Absorption spectra
1Absorption spectrum
1Aluminium Antimonides arsenides
1Aluminium antimonides
1Aluminium arsenides
1Application
1Atomic force microscopy
1Auger recombination
1Background noise
1Carrier density
1Charge carrier injection
1Cladding (coating)
1Composition effects
1Compressive stress
1Cryogenic temperature
1Current measurement
1Cut off frequency
1Dark current
1Dispersion relations
1Electrical measurement
1Electrical properties
1Electroluminescence
1Electronic properties
1Energy gap
1Envelope function
1Epitaxial layers
1Hall effect
1Heterostructures
1High temperature
1Image resolution
1Indium Antimonides arsenides
1Infrared detection
1Infrared detector
1Infrared detectors
1Interface structure
1Laser materials
1Light emission
1Measurement sensor
1Metal-organic vapor phase deposition
1Metallorganic chemical vapor deposition
1Midwavelength infrared regions
1Multilayers
1Multiple quantum well
1Nitrogen
1Nitrogen additions
1Optical amplification
1Optical losses
1Optical materials
1Optical properties
1Optical waveguides
1Optoelectronic device
1Output power
1Performance
1Photodetector
1Photodetectors
1Photodiode
1Photovoltaic cell
1Photovoltaic effects
1Quantum detector

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